SiC功率模块用氮化硅陶瓷AMB覆铜基板的研究进展  

Research Advances of Silicon Nitride Ceramic AMB Copper-Clad Substrates for SiC Power Modules

作　　者：赵昱 刘林杰[1] 吴亚光[1] 张义政 刘思雨 谢峥嵘 Zhao Yu;Liu Linjie;Wu Yaguang;Zhang Yizheng;Liu Siyu;Xie Zhengrong(The 13^(th) Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2024年第8期1-9,共9页Micronanoelectronic Technology

摘　　要：国内新能源汽车领域对SiC功率模块的高压、大功率和高可靠的要求,为氮化硅陶瓷活性金属焊接(AMB)覆铜基板的大规模应用提供了支撑。从氮化硅陶瓷AMB覆铜基板制备工艺流程入手,重点介绍国内氮化硅陶瓷AMB覆铜基板的研究现状。综述了氮化硅陶瓷基板的国内外研究进展,并总结了提升氮化硅陶瓷基板热导率和强度的主要方法。汇总了氮化硅陶瓷AMB覆铜用活性焊料的类型、作用机理和应用方法。阐述了获得低空洞率氮化硅陶瓷AMB覆铜基板的钎焊方法。简述了氮化硅陶瓷AMB覆铜基板刻蚀的工艺流程。从镀液选择、镀覆时间、镀液温度等方面,详细论述了氮化硅陶瓷AMB覆铜基板在镀覆工艺中的注意事项。最后指出了国内氮化硅陶瓷AMB覆铜基板在材料性能和生产工艺上的不足,并展望了未来氮化硅陶瓷AMB覆铜基板的研究及发展方向。The requirements of high-voltage,high-power and high-reliability for SiC power modules in the field of domestic new energy vehicle provide support for the large-scale application of silicon nitride ceramic active metal brazing(AMB)copper-clad substrates.Based on the preparation process of silicon nitride ceramic AMB copper-clad substrates,and the domestic research status of silicon nitride ceramic AMB copper-clad substrates are emphatically introduced.The research progress of silicon nitride ceramic substrates at home and abroad are overviewed,and the main methods for improving the thermal conductivity and strength of silicon nitride ceramic substrates are summarized.The types,mechanisms of action and application methods of active solders used for silicon nitride ceramic AMB copper-clad substrates are summed up.Brazing methods to obtain silicon nitride ceramic AMB copper-clad substrates with a low void percentage are described.The etching process flow of silicon nitride ceramic AMB copper-clad substrates are briefly described.From the aspects of plating solution selection,plating time and plating solution temperature,the precautions of silicon nitride ceramic AMB copper-clad substrates in the plating process are discussed in detail.Finally,the shortcomings of domestic silicon nitride ceramic AMB copper-clad substrates in terms of material properties and production processes are pointed out,and future research and development direction of silicon nitride ceramic AMB copper-clad substrates are prospected.

关 键 词：SiC功率模块 氮化硅陶瓷基板 活性焊料 钎焊 刻蚀 镀覆 

分 类 号：TB34[一般工业技术—材料科学与工程] TN384[电子电信—物理电子学]