封装工艺对半导体激光器偏振特性的影响  

Influence of Packaging Technology on Polarization Characteristics of Semiconductor Laser

作　　者：沈牧[1] 房玉锁[1] 申正坤 Shen Mu;Fang Yusuo;Shen Zhengkun(The 13^(th) Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2024年第8期150-156,共7页Micronanoelectronic Technology

摘　　要：研究了封装工艺对半导体激光器偏振度的影响,包括封装结构、热沉材料、焊料组分、焊料厚度、烧结压力以及烧结温度等方面。通过对功率25W、波长976nm单管半导体激光器封装工艺进行优化,实现了该半导体激光器应力匹配封装,进而提高了其偏振度。研究结果表明,在金锡焊料厚度6~8μm、金锡焊料中金组分77%~79%、烧结温度320℃、烧结压力50gf(1gf=9.8mN)、预热时间10s、降温速率6℃/s等工艺条件下,该半导体激光器横电(TE)模式偏振度测试值达到97.9%~98.6%。The influences of the packaging technology on polarization degree of semiconductor lasers were researched,including packaging structure,heat sink material,solder composition,solder thickness,sintering pressure、sintering temperature,etc.By optimizing the packaging process of single chip semiconductor laser with frequency of 25 W and wavelength of 976 nm,the stress matching packaging of the semiconductor laser was realized,and the polarization degree was improved.The research results indicate that under the process conditions of the gold-tin solder thickness of 6-8μm,gold composition in the gold-tin solder of 77%-79%,sintering temperature of 320℃,sintering pressure of 50 gf(1 gf=9.8 mN),preheating time of 10 s and cooling rate of 6℃/s,the polarization degree test value of the semiconductor laser transverse electric(TE)mode reaches 97.9%-98.6%.

关 键 词：半导体激光器 合束 偏振 封装 烧结 

分 类 号：TN305.94[电子电信—物理电子学]