红外探测器电极设计  

Infrared detector electrode design

作　　者：龚志红[1] 甘玉梅[1] 刘森[1] 李忠贺[1] 张磊[1] GONG Zhi-hong;GAN Yu-mei;LIU Sen;LI Zhong-he;ZHANG Lei(North China Research Institute of Electro-Optics,Beijing 100015 China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2024年第7期1076-1080,共5页Laser & Infrared

摘　　要：针对红外探测器芯片使用的电极体系展开了调研,虽然国内、外很多红外探测器生产厂商、科研院所都公布了各自的电极体系,但是对于电极的设计很少有人提及,对于电极体系中各层薄膜的厚度设计更是鲜见。本文通过对常用电极材料的物理特性分析,设计了一种电极体系。验证试验结果表明这种电极体系未对器件性能造成影响,可以满足器件的可靠性要求。In this paper,the PAD used in infrared detector chips is investigated.Although many domestic and foreign infrared detector manufacturers,research institutes have published their own electrode system,but for the design of the electrode is rarely mentioned,for the electrode system of the thickness of each layer of the film design is even rarer.An electrode system is designed by analyzing the physical properties of commonly used electrode materials and the validation test results show that this electrode system does not affect the performance of the device and can meet the reliability requirements of the device.

关 键 词：IRFPA 电极材料 物理特性 厚度 

分 类 号：TN215[电子电信—物理电子学] TN29