嵌入分段半超结的p-栅增强型垂直GaN基HFET  

p-Gate Enhanced Vertical GaN-Based HFET Embedded with Discrete Semi-Super-Junction

作　　者：杨晨飞 韦文生[1] 汪子盛 丁靖扬 YANG Chenfei;WEI Wensheng;WANG Zisheng;DING Jingyang(College of Electrical and Electronic Engineering,Wenzhou University,Wenzhou 325035,China)

机构地区：[1]温州大学电气与电子工程学院,浙江温州325035

出　　处：《电子与封装》2024年第8期98-108,共11页Electronics & Packaging

基　　金：国家自然科学基金(62374116)。

摘　　要：元胞面积相同的增强型垂直GaN/AlGaN异质结场效应管比横向HFET能承受更高的电压和更大的电流,适用于大功率领域,但在耐压时漂移区场强峰值高而容易提前击穿。提出了一种嵌入分段半超结的增强型垂直HFET,利用p型掺杂GaN栅和p+型掺杂GaN电流阻挡层抬高GaN/AlGaN异质结导带至费米能级之上,在栅压为0时夹断异质结的2DEG沟道,实现增强功能;在漂移区两侧插入2段p-GaN柱,形成p/n/p型离散半超结,改善电场均匀性。采用Silvaco TCAD软件模拟了Al组份、CBL浓度、p-GaN柱的宽度和厚度等参数对器件性能的影响。结果表明,相比于包含普通半超结的HFET,器件的击穿电压提升了8.67%,静态品质因数提升了11.25%,导通延时缩短了16.38%,关断延时缩短了3.80%,可为设计高性能HFET提供新思路。The enhanced vertical GaN/AlGaN heterojunction field effect transistor(HFET)can withstand higher voltages and higher currents than the lateral HFET with the same cell area,which is more suitable for high-power electronics.However,it may suffer easily from premature breakdown during the withstand voltage due to strong electric field peak occurring in the drift region.An enhanced vertical HFET embedded with discrete semi-super-junction is proposed,where the p-type doped GaN gate layer and p+-type doped GaN current barrier layer are used to elevate the GaN/AlGaN heterojunction conduction band above the Fermi energy level for clamping-off the 2DEG channel at the heterojunction when the gate voltage is zero,and to realize the enhancement function.Two separate p-type doped GaN pillars are inserted at both sides of the drift region(DR)to form p/n/p-type discrete semi-super-junction for improving the electric field uniformity.The influences of Al component,CBL concentration,width and thickness of the p-GaN pillar on the device performance are simulated by the Silvaco TCAD software.The results indicate that compared with the HFET included a common semi-super-junction,the breakdown voltage of the proposed device increases by 8.67%,the static figure of merit lifts by 11.25%,the turn-on delay time shortens by 16.38%,and the turn-off delay time curtails by 3.80%,which can provide a new idea for designing high-performance HFET.

关 键 词：增强型垂直HFET 分段半超结 GaN/AlGaN异质结 

分 类 号：TN323.4[电子电信—物理电子学]