压控型脉冲功率半导体器件技术及应用  

Technology and application of the voltage-controlled pulse power semiconductor devices

作　　者：孙瑞泽[1] 陈万军[1] 刘超[1] 刘红华 姚洪梅 张波[1] Sun Ruize;Chen Wanjun;Liu Chao;Liu Honghua;Yao Hongmei;Zhang Bo(School of Integrated Circuits Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China;Honglin Company of China Aerospace Sanjiang Group,Xiaogan 432000,China;Chengdu ZDHC Limited,Chengdu 610095,China)

机构地区：[1]电子科技大学集成电路科学与工程学院,成都611731 [2]湖北三江航天红林探控有限公司,湖北孝感432000 [3]成都智达和创信息科技有限公司,成都610095

出　　处：《强激光与粒子束》2024年第9期94-102,共9页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(62334003)。

摘　　要：近年来,采用新一代半导体开关替代传统气体或真空开关是脉冲功率系统的一种重要发展趋势。为了给脉冲功率半导体器件领域的技术发展提供参考,简要介绍了压控型脉冲功率半导体器件技术的发展历程,总结了MOS栅控晶闸管(MCT)在器件设计、工艺和可靠性等方面的研究进展,同时通过比较MCT与一般商业IGBT器件,阐述了MCT相比于其他功率脉冲半导体器件的优劣情况,并结合典型应用场景展示了MCT器件的优势,对压控型脉冲功率半导体器件的发展趋势进行了简要分析。Pulse power technology compresses low-power energy in the time domain to achieve high-power output in extremely short durations.In recent years,the trend in pulse power technology has been replacing traditional gas or vacuum switches with a new generation of semiconductor switches.To promote the technical development in the field of pulse power semiconductor devices,this article briefly introduces the development history of voltagecontrolled pulse power semiconductor devices and the structure of MOS-controlled thyristors(MCTs).By comparing the pulse performance of MCT with that of commercial IGBT,it illustrates the advantages of high pulse current peak and high di/dt pulse of MCT under the same conditions.However,the conventional MCT cannot be turned off at zero gate voltage,and the carrier injection efficiency and conduction speed need to be further improved.To solve the shortcomings of conventional MCT that can not be turned off under zero voltage,this article then summarizes the research progress in device design,technology,and reliability of MCT.It also demonstrates the advantages of MCT devices in typical application scenarios and provides a brief analysis of the development trends of voltage-controlled pulse power semiconductor devices.

关 键 词：脉冲功率技术 脉冲功率半导体开关 MOS栅控晶闸管 电压控制 重复脉冲 

分 类 号：TN386[电子电信—物理电子学]