基于界面效应的二维拓扑量子材料外延生长与调控研究进展  

Research Progress on Epitaxial Growth and Engineering of Two-Dimensional Topological Quantum Materials Based on Interfacial Effect

作　　者：张翼 ZHANG Yi(National Laboratory of Solid State Microstructure,School of Physics,Nanjing University,Nanjing 210093)

机构地区：[1]南京大学物理学院,固体微结构物理国家重点实验室,南京210093

出　　处：《中国基础科学》2024年第3期37-43,F0003,共8页China Basic Science

基　　金：国家重点研发计划项目(2018YFA0306800)。

摘　　要：具有1T’结构相的单原胞层过渡金属硫族化合物是一类重要的二维拓扑量子材料,在拓扑量子计算和自旋电子学等领域有重要的应用前景。但是,大多数过渡金属硫族化合物的1T’结构相为非热力学稳定相,实验上获得其1T’结构相的单原胞层样品极其困难。以1T’-WSe2为代表,深入研究外延生长过程中界面效应对其1T’结构相稳定性的影响。以此为基础,通过增强的界面相互作用实现单一纯相1T’-WSe2单原胞层薄膜的外延生长。该方法可进一步推广到单一1T’结构相单原胞层WS2的外延生长,为人们进一步研究二维拓扑量子材料的基本物性、构筑基于二维拓扑量子材料的异质结构和新颖量子物态、实现基于二维拓扑量子材料的拓扑量子计算提供材料基础。Monolayer transition metal dichalcogenides with 1T'structural phase is an important class of twodimensional topological quantum materials,which show great application potentials in the fields of topological quantum computing and spintronics.However,for the most of the transition metal dichalcogenides,their IT'phase is not the thermally stable one,making it very difficult to obtain monolayer samples with 1T'phase.The interfacial effect on the thermal stability of 1T'phase during the epitaxial growth was investigated by taking IT'-WSe2 as a representation.Based on this research,the epitaxial growth of single-phase 1T'-WSe2 monolayer was realized with the assistance of enhanced interfacial interactions.This method can be further applied to the epitaxial growth of single-phase 1T'-WS2 monolayer.This method and the 1T'phase monolayer transition metal dichalcogenides would provide material basis for the further research on the fundamental physical properties of two-dimensional topological quantum materials,fabrication of heterostructures and novel quantum states based on them,and the topological quantum computing based on two-dimensional topological quantum materials.

关 键 词：二维材料 拓扑绝缘体 分子束外延生长 界面效应 

分 类 号：O413[理学—理论物理]