锑化铟焦平面器件背面的湿法腐蚀技术研究  

Study on Wet Etching Technology for the Back of InSb Focal Plane Devices

作　　者：米南阳 刘园园 李忠贺[1] 吴卿[1] 赵建忠[1] MI Nan-yang;LIU Yuan-yuan;LI Zhong-he;WU Qing;ZHAO Jian-zhong(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2024年第8期18-23,共6页Infrared

摘　　要：湿法腐蚀可以有效地去除芯片在背减薄过程中因机械作用产生的损伤,提升器件的量子效率。为了获得一种合适的湿法腐蚀方法,研究了以氢氟酸、盐酸和乳酸为主的3种不同体系的酸性锑化铟腐蚀液。通过金相显微镜和原子力显微镜的表征结果选取最优的腐蚀液体系。在此基础上继续优化了氢氟酸腐蚀液的浓度和配比,研究了腐蚀液的腐蚀速率和一致性。最后,使用优化后的腐蚀液处理锑化铟芯片,研究了该芯片在77 K温度下的性能。电平图结果显示,该腐蚀液可以有效地去除芯片表面的损伤,而且器件电压信号Vs达到485 mV。湿法腐蚀技术成功应用于芯片背减薄后的表面处理,对于锑化铟背面处理技术的研究有重要意义。Wet etching can effectively remove the damage caused by mechanical effects during the back thinning process of chips,and improve the quantum efficiency of devices.In order to obtain a suitable wet etching method,three different acidic indium antimonide etching solutions were studied,mainly consisting of hydrofluoric acid,hydrochloric acid and lactic acid.The optimal etching solution system was selected based on the characterization results of metallographic microscopy and atomic force microscopy.On this basis,the concentration and ratio of hydrofluoric acid etching solution were further optimized,and the etching rate and consistency of the etching solution were studied.Finally,the optimized etching solution was used to treat the indium antimonide chip,and the performance of the chip at 77K temperature was studied.The planar results show that the etching solution can effectively remove the damage on the chip surface,and the device voltage signal reaches 485 mV.The successful application of wet etching technology in surface treatment of chip back thinning has important significance for the research of indium antimonide back treatment technology.

关 键 词：锑化铟 化学腐蚀 背面处理 

分 类 号：TN21[电子电信—物理电子学]