用于E型薄膜制备的双掩膜工艺研究  

Study on the Double Mask Process for Preparation of E-Type Films

作　　者：郝一鸣 雷程[1] 王涛龙 余建刚 冀鹏飞 闫施锦 梁庭[1] HAO Yiming;LEI Cheng;WANG Taolong;YU Jiangang;JI Pengfei;YAN Shijin;LIANG Ting(State Key Laboratory of Dynamic Measurement Technology,North University of China,Taiyuan 030051,China;Chengdu Spaceon Electronics Co.,Ltd.,Chengdu 610037,China)

机构地区：[1]中北大学省部共建动态测试技术国家重点实验室,山西太原030051 [2]成都天奥电子股份有限公司,四川成都610037

出　　处：《压电与声光》2024年第4期505-510,共6页Piezoelectrics & Acoustooptics

基　　金：国家重点研发计划资助项目(2023YFB3209100);中央引导地方科技发展资金资助项目(YDZJSX20231B006);山西省重点研发计划资助项目(202302030201001)。

摘　　要：在高温压力传感器中,与C型膜片相比,E型膜片的稳定性强,非线性误差小,相同挠度下灵敏度高。在微机电系统(MEMS)工艺流程中薄膜制备较重要,其形貌结构对传感器的性能影响较大。但E型薄膜的制备过程较难,为制备出形貌良好的E型(硅岛)薄膜,采用深反应离子刻蚀机,以SF_(6)为主要刻蚀气体,通过改变掩模材料对制备工艺进行优化改进,使用共聚焦显微镜和扫描电子显微镜(SEM)对刻蚀后的形貌进行表征。实验表明,通过使用ROL-7133负胶和SiO_(2)双掩膜,前烘90 s,中烘120 s,显影50 s,得到了硅岛高度为50μm、背腔深度为450μm的E型薄膜,垂直度较高且整体形貌较好,符合传感器制作要求。In high-temperature pressure sensors,the E-type diaphragm offers advantages such as strong stability,minimal nonlinear error,and higher sensitivity under the same deflection compared to the C-type diaphragm.The preparation of thin films is crucial in the MEMS process,given that their morphology and structure greatly influence sensor performance.However,there are several challenges in preparing E-type thin films.To produce E-type(silicon island) thin films with good morphology,a DRIE deep reactive ion etching machine was used with SF_(6) as the main etching gas.The preparation process was optimized and improved using changing the mask material,and the morphology after etching was characterized using confocal microscopy and scanning electron microscopy(SEM).Experiments showed that using ROL-7133 negative adhesive and a SiO_(2) double mask,with pre-drying for 90 s,mid-drying for 120 s,and developing for 50 s,resulted in E-type films with a silicon island height of 50 μm and a back cavity depth of 450 μm.These films exhibited high perpendicularity and good overall morphology,meeting the requirements for sensor production.

关 键 词：双掩膜 E型薄膜 深反应离子刻蚀 刻蚀比 刻蚀形貌 

分 类 号：TN384[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]