高阻硅衬底的高质量Ⅲ族氮化物外延及其研究  

The study of high-quality Ⅲ nitride epitaxial on High-resistance silicon substrate

作　　者：陈兴 CHEN Xing(XidianWuhu Research Institute)

机构地区：[1]西安电子科技大学芜湖研究院

出　　处：《中国集成电路》2024年第8期57-61,共5页China lntegrated Circuit

摘　　要：GaN器件因为特殊的2DEG(形成密度高达2×10^(13)cm^(-2))的高电子密度和高迁移率,在高频高压大功率微电子器件领域具有很大的应用前景。在本文的研究中,通过使用MOCVD(金属有机化学气相沉积系统)成功地在8英寸高阻硅衬底上外延生长出AlGaN/GaN HEMT薄膜材料,实验结果表明外延片光滑均匀无裂纹、翘曲度较低、结晶质量好、传导性佳,并且抗击穿能力强。GaN devices have great application prospects in the field of high-frequency,high-voltage,high-power microelectronic devices due to the high electron density and high mobility of the special 2DEG(formation density up to 2×10^(13) cm^(-2)).In this study,the AlGaN/GaN HEMT thin film material was successfully grown by epitaxial on an 8-inch High-resistance silicon substrate by MOCVD(Organometallic Chemical Vapor Deposition System),and the epitaxial wafer was s mooth and uniform without cracks,low warpage,good crystallization quality,good conductivity and strong anti-breakdo wn ability.

关 键 词：高阻硅衬底 MOCVD GaN外延 

分 类 号：TN386[电子电信—物理电子学]