一款Ku波段的低噪声放大器设计  

Design of a Low Noise Amplifier Design Covering the Ku-Band

作　　者：王云阁 邓志翔 WANG Yunge;DENG Zhixiang(Intelligent Manufacturing Department of Nanxiong Vocational School,Guangdong 512400,China)

机构地区：[1]南雄市中等职业学校智能制造部,广东512400

出　　处：《集成电路应用》2024年第7期16-19,共4页Application of IC

摘　　要：阐述采用0.15μm GaAspHEMT工艺,基于ADS仿真,设计一款工作频率在12~18GHz的两级级联宽带LNA。电路采用电阻偏压实现单电源供电,输入输出级电压采用共源级放大电路自偏置的拓扑结构,保证了系统的低噪声和高增益。同时引入串联负反馈网络配合宽带匹配技术拓展系统的工作带宽。仿真结果显示,系统工作在Ku波段(12~18GHz)时,输入输出回波损耗总体小于-10dB,增益维持在19dB左右,同时系统噪声低于1.45dB,可取得良好的性能。This paper describes that 0.15μm GaAs pHEMT process is employed to design a two-stage cascaded broadband LNA with an operating frequency in the range of 12~18 GHz based on ADS simulation.The circuit adopts resistive biasing to realize a single-supply power supply,and the input and output stage voltages are self-biased with a common-source stage amplifier circuit topology,which ensures the low noise and high gain of the system.Meanwhile,a series negative feedback network is introduced to expand the operating bandwidth of the system with the broadband matching technique.Simulation results show that when the system works in Ku-band(12~18 GHz),the input and output return loss is less than-10 dB,the gain is maintained at about 19 dB,and the system noise is lower than 1.45 dB,which achieves good performance.

关 键 词：电路设计 低噪声放大器 自偏置 KU波段 

分 类 号：TN432[电子电信—微电子学与固体电子学]