基于0.18μm工艺的压控增益仪表放大器设计  

Design of Voltage Controlled Gain Instrument Amplifier Based on 0.18μm Process

作　　者：王宝晶 宋光坤 赵爱清[1] WANG Baojing;SONG Guangkun;ZHAO Aiqing(Tianjin Modern Vocational and Technical College,Tianjin 300350,China)

机构地区：[1]天津现代职业技术学院,天津300350

出　　处：《集成电路应用》2024年第7期25-29,共5页Application of IC

摘　　要：阐述一款基于0.18μm CMOS工艺的压控增益仪表放大器设计。该仪表放大器可通过电压控制实现三个增益档位的调节,通过优化仪表放大器内部的运放结构,使得仪表放大器在0.18μm CMOS工艺下具有高性能指标,并可实现增益较大范围的调节。利用Aether IC设计平台进行底层电路搭建及仿真验证,仿真表明,所设计的仪表放大器具有高电源抑制比、高输入阻抗、高共模抑制比、低功耗、低失调的特点,且具有较高的稳定性,为0.18μm CMOS工艺的压控增益仪表放大器的设计提供了理论依据。This paper expounds the design of a voltage controlled gain Instrumentation amplifier based on 0.18μm CMOS process.The Instrumentation amplifier can adjust three gain gears through voltage control.By optimizing the operation amplifier structure inside the Instrumentation amplifier,the Instrumentation amplifier has high performance indicators in 0.18μm CMOS process and can achieve a wide range of gain adjustment.The Aether IC design platform is used to build the bottom circuit and verify the simulation.The simulation shows that the Instrumentation amplifier designed in this paper has the characteristics of high power supply rejection ratio,high input impedance,high Common-mode rejection ratio,low power consumption,low offset,and high stability,which provides a theoretical basis for the design of 0.18μm CMOS voltage controlled gain Instrumentation amplifier.

关 键 词：0.18μm工艺 仪表放大器 压控增益 Aether Aeolus仿真 

分 类 号：TN722[电子电信—电路与系统]