High-performance GaSb planar PN junction detector  

作　　者：Yuanzhi Cui Hongyue Hao Shihao Zhang Shuo Wang Jing Zhang Yifan Shan Ruoyu Xie Xiaoyu Wang Chuang Wang Mengchen Liu Dongwei Jiang Yingqiang Xu Guowei Wang Donghai Wu Zhichuan Niu Derang Cao 

机构地区：[1]College of Physics,National Demonstration Center for Experimental Applied Physics Education,Qingdao University,Qingdao 266071,China [2]Key Laboratory of Optoelectronic Materials and Devices,Chinese Academy of Sciences,Beijing 100083,China [3]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2024年第9期48-52,共5页半导体学报（英文版）

摘　　要：This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 10^(10) cm·Hz^(1/2)/W, and a minimum dark current density of 1.02 × 10^(-5) A/cm^(2).Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.

关 键 词：ANTIMONIDE short-wave infrared planar junction zinc diffusion 

分 类 号：TN215[电子电信—物理电子学]