云南高校图书馆联盟文献共享服务平台- ANTIMONIDE

ANTIMONIDE: 作品数：19被引量：13H指数：2; 导出分析报告; 相关领域：电子电信理学更多>>; 相关期刊：《Journal of Rare Earths》《Science China(Physics,Mechanics & Astronomy)》《Journal of Materials Science & Technology》《High Power Laser Science and Engineering》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

Special kinetics features of scandium antimonide thin films conducive to swiftly embedded phase-change memory applications: 《Science China Materials》2024年第11期3684-3691,共8页Xue-Peng Wang Bin Chen Huang Gong Xinxin Duan Yimin Chen Feng Rao; the National Natural Science Foundation of China(52032006);the Basic and Applied Basic Research Foundation of Guangdong(2020B1515120008);the Science and Technology Foundation of Shenzhen(ZDSYS20210623091813040);Shenzhen University 2035 Program for Excellent Research(00000203)。; Embedded phase-change random-access memory(ePCRAM)applications demand superior data retention in amorphous phase-change materials(PCMs).Traditional PCM design strategies have focused on enhancing the thermal stability...; 关键词：embedded phase-change memory scandium antimonide crystallization kinetics flash differential scanning calorimetry

High-performance GaSb planar PN junction detector: 《Journal of Semiconductors》2024年第9期48-52,共5页Yuanzhi Cui Hongyue Hao Shihao Zhang Shuo Wang Jing Zhang Yifan Shan Ruoyu Xie Xiaoyu Wang Chuang Wang Mengchen Liu Dongwei Jiang Yingqiang Xu Guowei Wang Donghai Wu Zhichuan Niu Derang Cao; This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed ...; 关键词：ANTIMONIDE short-wave infrared planar junction zinc diffusion

Precise mode control of mid-infrared high-power laser diodes using on-chip advanced sawtooth waveguide designs: 《High Power Laser Science and Engineering》2024年第4期41-47,共7页Jianmei Shi Chengao Yang Yihang Chen Tianfang Wang Hongguang Yu Juntian Cao Zhengqi Geng Zhiyuan Wang Haoran Wen Hao Tan Yu Zhang Dongwei Jiang Donghai Wu Yingqiang Xu Haiqiao Ni Zhichuan Niu; supported by the National Natural Science Foundation of China(Grant No.62204238);the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0300801);‘Announce the list and take charge’of the Major Special Plan of Science and Technology in Shanxi Province(Grant No.202201030201009);the National Key R&D Program of China(Grant No.2019YFA0705203)。; Power scaling in conventional broad-area(BA)lasers often leads to the operation of higher-order lateral modes,resulting in a multiple-lobe far-field profile with large divergence.Here,we report an advanced sawtooth wa...; 关键词：antimonide semiconductor lasers FAR-FIELD mode control

Large-diameter indium antimonide microwire based broadband and robust optical switch: 《Science China(Physics,Mechanics & Astronomy)》2023年第2期68-78,共11页Fei Lou Xiangpeng Cui Xinyue Sheng Chunyan Jia Shuaiyi Zhang Xia Wang Vladislav Khayrudinov Baitao Zhang Shande Liu Wing Yim Tam Harri Lipsanen He Yang Jingliang He; supported by the National Natural Science Foundation of China (Grant Nos. 62005139, and 12174212);Natural Science Foundation of Shandong Province (Grant No. ZR2019MF061);the support of Aalto University Doctoral School;Walter Ahlstram Foundation;Elektroniikkainsinoorien Saatio;Sahkoinsinooriliiton Saatio;Nokia Foundation;Finnish Foundation for Technology Promotion (Tekniikan Edistamissaatio);Waldemar von Frenckell’s Foundation;Kansallis-Osake-Pankki Fund。; Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied.Nevertheless,studying the optoelectronics properties and performance of such devices based on large...; 关键词：optical ANTIMONIDE INSB

La_(2)Rh_(3+δ)Sb_(4):a new ternary superconducting rhodium-antimonide: 《Materials Futures》2022年第4期155-163,共9页Kangqiao Cheng Wei Xie Shuo Zou Huanpeng Bu Jin-Ke Bao Zengwei Zhu Hanjie Guo Chao Cao Yongkang Luo; This work was supported by the open research fund of Songshan Lake Materials Laboratory(2022SLABFN27);NSF of China(Grants Nos.12004270,51861135104,11574097,12204298,12274364 and 11874137);the Fundamental Research Funds for the Central Universities of China(2019kfyXMBZ071);Guangdong Basic and Applied Basic Research Foundation(2019A1515110517);the Pioneer and Leading Goose R&D Program of Zhejiang(2022SDXHDX0005).; Rhodium-containing compounds offer a fertile playground to explore novel materials with superconductivity(SC)and other fantastic electronic correlation effects.A new ternary rhodium-antimonide La_(2)Rh_(3)+δSb_(4)(δ...; 关键词：SUPERCONDUCTIVITY electronic correlation effect crystalline structure

(Ba_(1−x)Na_(x))F(Zn_(1−x)Mn_(x))Sb: A novel fluoride-antimonide magnetic semiconductor with decoupled charge and spin doping被引量：2: 《Journal of Semiconductors》2022年第11期38-43,共6页Xueqin Zhao Jinou Dong Licheng Fu Yilun Gu Rufei Zhang Qiaolin Yang Lingfeng Xie Yinsong Tang Fanlong Ning; The work was supported by the Key R&D Program of Zhejiang Province,China(2021C01002);NSF of China(No.12074333).; We report the successful synthesis and characterization of a novel 1111-type magnetic semiconductor(Ba_(1−x)Na_(x))F(Zn_(1−x)Mn_(x))Sb(0.05≤x≤0.175)with tetragonal ZrSiCuAs-type structure,which is isostructural to t...; 关键词：magnetic semiconductors ferromagnetic interaction carriers SPIN-GLASS

A promising two-dimensional channel material:monolayer antimonide phosphorus: 《Science China Materials》2016年第8期648-656,共9页蔡波谢美秋张胜利黄呈熙阚二军陈显平顾宇曾海波; supported by the National Key Basic Research Program of China(2014CB931702);the National Natural Science Foundation of China(NSFC,51572128);the NSFC and the Research Grants Council(RGC)of Hong Kong Joint Research Sctheme(5151101197);the Priority Academic Program Development of Jiangsu Higther Education Institutions; As the base of modern electronic industry,field-effect transistor(FET) requires the channel material to have both moderate bandgap and high mobility. The recent progresses indicate that few-layer black phosphorus has ...; 关键词：phosphorene MOBILITY bandgap density functional CALCULATIONS ALLOYING strategy

Amorphous Structure and Bonding Chemistry of Aluminium Antimonide（AISb） Alloy for Phase-change Memory Device: 《Chemical Research in Chinese Universities》2016年第1期76-81,共6页SUN Yu WANG Xuepeng DU Jiaren CHEN Nianke YU Hongmei WU Qi MENG Xing; Supported by the China Postdoctoral Science Foundation（No.2013T60315） and the National Natural Science Foundation of China（No. 11374119）.; With the help of first-principles molecular dynamics calculations, we obtained the atomic picture of amorphous A1Sb（a-A1Sb） for phase-change memory application. Generally, a-A1Sb shows sp3 bonding network, which is ...; 关键词：AISb alloy Amorphous phase Phase-change memory device Ab initio calculation

Wet Chemical Etching of Antimonide-Based Infrared Materials被引量：1: 《Chinese Physics Letters》2015年第10期102-105,共4页郝宏玥向伟王国伟徐应强任正伟韩玺贺振宏廖永平魏思航牛智川; Supported by the National Basic Research Program of China under Grant Nos 2014CB643903,2013CB932904,2012CB932701and 2011CB922201;the National Special Funds for the Development of Major Research Equipment and Instruments under Grant No 2012YQ140005;the National Natural Science Foundation of China under Grant Nos 61274013,U1037602 and 61290303;the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB01010200; The roughness and the crystallographic orientation selectivity of etched antimonide-based infrared materials are examined and are used to optimize the chemical mesa etching process of the InAs/GaSb superlattice photod...

High sensitivity Hall devices with AlSb/InAs quantum well structures: 《Chinese Physics B》2013年第5期453-455,共3页张杨张雨溦王成艳关敏崔利杰李弋洋王宝强朱战平曾一平; Project supported by the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T04);the National Natural Science Foundation of China (Grant Nos. 61204012 and 61274049);the Beijing Natural Science Foundation, China (Grant No. 2112040);the Beijing Nova Program, China (Grant No. 2010B056); A1Sb/InAs quantum well （QW） structures and InAs films on GaAs （001） substrates were grown by molecular beam epitaxy （MBE）. We investigated the dependence of electron mobility and two-dimensional electron gas （2...; 关键词：antimonide semiconductors quantum well molecular beam epitaxy

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