一种改善IMD3的高线性射频功率放大器  

A high linear RF power amplifier with the improved IMD3

作　　者：张超然 杨以俊 孙晓红 ZHANG Chaoran;YANG Yijun;SUN Xiaohong(School of Electronic and Information Engineering,Suzhou University of Science and Technology,Suzhou215009,Jiangsu Province,China)

机构地区：[1]苏州科技大学电子与信息工程学院,江苏苏州215009

出　　处：《电子元件与材料》2024年第7期872-877,共6页Electronic Components And Materials

基　　金：国家自然科学基金(62104167)。

摘　　要：基于2μm砷化镓异质结双极型晶体管(GaAs HBT)工艺成功设计出了一款工作在2.4 GHz的高线性、高效率的射频功率放大器(RF PA)。针对非线性因素三阶交调失真(IMD3)对电路造成的影响,采用了一种两级功放电路结构,通过对两级偏置中的旁路电路进行调节,得到了两个反相可互消的三阶交调分量,有效地改善了功放非线性指标IMD3的值。对芯片进行测试,所得结果表明:在连续单音信号测试下,功放输出的1 dB压缩点功率(P1dB)为33.3 dBm,功率附加效率(PAE)为58%@33.3 dBm,增益为30.8 dB。在音距为1 MHz的双音信号测试下,三阶交调失真低于-50 dBc@20 dBm,最大三阶输出截断点(OIP3)为47 dBm@23.8 dBm。A 2.4 GHz radio frequency power amplifier(RF PA)was successfully designed with high linearity and efficiency using a 2μm gallium arsenide heterojunction bipolar transistor(GaAs HBT)technology.To address the third-order intermodulation distortion(IMD3)caused by nonlinear effect,a two-stage amplifier circuit structure was adopted.By optimizing the bypass circuits in the two-stage bias network,two cancelable third-order intermodulation components were obtained,and the IMD3 of the power amplifier was effectively improved.Under continuous single-tone signal testing,it shows that the power amplifier achieves a 1 dB compression point power(P1dB)of 33.3 dBm,a power-added efficiency(PAE)of 58%at 33.3 dBm,and a gain of 30.8 dB.Additionally,with a tone spacing of 1 MHz,the measured IMD3 is below-50 dBc at 20 dBm,and the maximum third-order output intercept point(OIP3)is 47 dBm at 23.8 dBm.

关 键 词：三阶交调失真 射频功率放大器 高线性度 异质结双极型晶体管 

分 类 号：TN722.7[电子电信—电路与系统]