应力调控下基于Skyrmion的晶体管特性  

Transistor Characteristics Based on Skyrmion Under Stress Regulation

作　　者：陆文魁 贾帅璠 陈琳[1] 陶志阔[1] Lu Wenkui;Jia Shuaifan;Chen Lin;Tao Zhikuo(College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,China)

机构地区：[1]南京邮电大学电子与光学工程学院、柔性电子(未来技术)学院,南京210023

出　　处：《半导体技术》2024年第9期800-805,共6页Semiconductor Technology

摘　　要：研究了不同应力、磁各向异性常数对电流驱动Skyrmion的动力学特性影响。随着施加应力增大,能够产生稳定Skyrmion的各向异性常数取值范围的上下限增大,即外加应力影响电流驱动时Skyrmion运行的稳定性。设计了一种宽-窄-宽型Skyrmion基晶体管,通过调控应力和各向异性常数来调控晶体管的开关特性。仿真结果表明,当极化电流密度、各向异性常数变化时,晶体管导通状态对应的应力范围也随之变化。研究结果为设计Skyrmion基晶体管及相关逻辑功能器件提供了新思路。The effects of different stress and magnetic anisotropy constants on the dynamic characteristics of current-driven Skyrmion were studied.As the applied stress increases,the upper and lower limits of the value range of the anisotropy constant that can produce stable Skyrmion increase,that is,the applied stress affects the stability of Skyrmion when the current is driven.A kind of wide-narrow-wide Skyrmion based transistor was designed.The switching characteristics of the transistor were regulated by adjusting the stress and anisotropy constant.The simulation results show that when the polarization current density and anisotropy constant change,the stress range corresponding to the on-state of the transistor also changes.The research results provide a new idea for designing Skyrmion based transistors and related logic functional devices.

关 键 词：SKYRMION 电流驱动 应力调控 自旋电子学 晶体管 

分 类 号：O482.5[理学—固体物理] TN322.5[理学—物理]