VB/VGF法制备掺FeInP晶体的电阻率均匀性  

Resistivity Uniformity of Fe-Doped InP Crystals Prepared by VB/VGF Method

作　　者：韩家贤 韦华 刘汉保 惠峰 雷云 何永彬 唐康中 王茺[3] Han Jiaxian;Wei Hua;Liu Hanbao;Hui Feng;Lei Yun;He Yongbin;Tang Kangzhong;Wang Chong(Yunnan Xinyao Semiconductor Materials Co.,Lid.,Kunming 650503,China;Faculty of Metallurgical and Energy Engineering,Kunming University of Science and Technology,Kunming 650031,China;School of Materials and Energy,Yunnan University,Kunming 650500,China)

机构地区：[1]云南鑫耀半导体材料有限公司,昆明650503 [2]昆明理工大学冶金与能源工程学院,昆明650031 [3]云南大学材料与能源学院,昆明650500

出　　处：《半导体技术》2024年第9期825-831,共7页Semiconductor Technology

基　　金：昆明市春城青年高层次人才创新项目(CCQNRC2023WH);昆明市春城青年拔尖人才创新项目(CCQNBJRC2023-009)。

摘　　要：针对4.5英寸(1英寸≈2.54 cm)掺Fe InP晶体普遍存在的轴向和径向电学参数分布不均匀问题,深入研究了晶体生长工艺参数对电学参数分布的影响。结合垂直布里奇曼(VB)法和垂直梯度凝固(VGF)法,利用六段温区控制及坩埚线性下降的装置,优化了坩埚的旋转和下降速度,以调节掺杂剂Fe在熔体中的分凝、固液界面形状及晶体头部与尾部的生长速度。这些措施不仅改善了晶体的固液界面形状,使其由较凹变得平缓,同时实现了晶体生长速率的合理匹配与温度梯度的精确控制,显著提升了晶体的位错密度和电学参数的均匀性。与传统VGF法相比,VB/VGF法掺Fe InP晶体的轴向电阻率差值降低了259%,径向电阻率均匀性提高了2.0%~7.1%。To address the common issue of uneven axial and radial electrical parameter distribution in 4.5 inch(1 inch~2.54 cm)Fe-doped InP crystals,the influence of crystal growth process parameters on the electrical parameter distribution was deeply investigated.By combining vertical Bridgman(VB)and vertical gradient freeze(VGF)methods,and utilizing a device with six-zone temperature control and linear descent of crucible,the rotation and lifting speed of the crucible were optimized to regulate the segregation of dopant Fe in the melt,the shape of the solid-liquid interface,and the growth rates of the crystal at the head and tail.These measures improve the shape of the solid-liquid interface,transforming it from concave to flat,and achieve a reasonable match of the crystal growth rate and precise control of the temperature gradient,which significantly enhances the uniformity of dislocation density and electrical parameters of the crystal.Compared with the conventional VGF method,the difference value in axial resistivity of the Fe-doped InP crystals prepared by VB/VGF method is reduced by 259%,and the radial resistivity uniformity is improved by 2.0%-7.1%.

关 键 词：INP 晶体生长 垂直布里奇曼(VB)法 垂直梯度凝固(VGF)法 电阻率 均匀性 

分 类 号：TN304.23[电子电信—物理电子学] TN304.053