Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf_(0.5)Zr_(0.5)O_(2)  

作　　者：Zhao-Hao Zhang Yan-Na Luo Gao-Bo Xu Jia-Xin Yao Zhen-Hua Wu Hong-Bin Zhao Qing-Zhu Zhang Hua-Xiang Yin Jun Luo Wen-Wu Wang Hai-Ling Tu 

机构地区：[1]Integrated Circuit Advanced R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China [2]School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China [3]State Key Laboratory of Advanced Materials for Smart Sensing,General Research Institute for Nonferrous Metals,Beijing 100088,China

出　　处：《Rare Metals》2024年第7期3242-3249,共8页稀有金属（英文版）

基　　金：financially supported by the Science and Technology Program of Beijing Municipal Science and Technology Commission (No.Z201100006820084);the National Natural Science Foundation of China (Nos.92064003,91964202 and 61904194);the Youth Innovation Promotion Association,Chinese Academy of Sciences under grant (Nos.2023130 and Y9YQ01R004)。

摘　　要：In this work,a conventional HfO_(2) gate dielectric layer is replaced with a 3-nm ferroelectric(Fe) HZO layer in the gate stacks of advanced fin field-effect transistors(FinFETs).Fe-induced characteristics,e.g.,negative drain induced barrier lowering(N-DIBL) and negative differential resistance(NDR),are clearly observed for both p-and n-type HZO-based FinFETs.These characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide(HZO) film,caused by Al doping from the TiAlC capping layer.This mechanism is verified for capacitors with structures similar to the FinFETs.Owing to the enhanced ferroelectricity and N-DIBL phenomenon,the drain current(I_(DS))of the HZO-FinFETs is greater than that of HfO_(2)-FinFETs and obtained at a lower operating voltage.Accordingly,circuits based on HZO-FinFET achieve higher performance than those based on HfO_(2)-FinFET at a low voltage drain(V_(DD)),which indicates the application feasibility of the HZO-FinFETs in the ultralow power integrated circuits.

关 键 词：FINFET FERROELECTRIC Hafnium zirconium oxide Subthreshold swing Low power 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN386[电子电信—物理电子学]