SiC MOSFET器件栅氧可靠性研究综述  

Review on Gate Oxide Reliability of SiC MOSFET Devices

作　　者：胡嘉豪 王英伦 代豪豪 邓小川[1] 张波[1] HU Jiahao;WANG Yinglun;DAI Haohao;DENG Xiaochuan;ZHANG Bo(School of Integrated Circuit Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学集成电路科学与工程学院,成都610054

出　　处：《电源学报》2024年第4期1-11,共11页Journal of Power Supply

摘　　要：碳化硅金属氧化物半导体场效应晶体管SiC MOSFET(silicon carbide metal-oxide-semiconductor field effect transistor)因具有高压、高频、低导通损耗等优异特性而获得产业界广泛关注,但相比于硅基IGBT,SiC/SiO_(2)栅氧界面高缺陷密度引起的栅氧可靠性问题成为制约SiC MOSFET器件规模化应用的关键瓶颈。通过对近年来国内外SiC MOSFET栅氧可靠性研究成果的梳理和分析,阐述了当前栅氧可靠性问题的形成原因,归纳总结了各类常用的栅氧可靠性评估方法,并进行了比较分析,最后重点探讨了极端工况下SiC MOSFET栅氧可靠性及其提升技术的发展现状。Silicon carbide metal-oxide-semiconductor field effect transistor( SiC MOSFET) has attracted attention from the industry owing to its excellent characteristics such as high voltage,high frequency and low conduction loss.However,compared with the silicon-based IGBT,the problem of gate oxide reliability caused by the high defect density at the SiC/SiO_(2) gate oxide interface has become a key bottleneck restricting the large-scale applications of SiC MOSFET devices.By sorting out and analyzing the research results of the gate oxide reliability of SiC MOSFET at home and abroad in recent years,the causes of the gate oxide reliability problems at present were elaborated upon,and various commonly-used gate oxide reliability evaluation methods were summarized and compared.Finally,the gate oxide reliability of SiC MOSFET under extreme operating conditions and the development status of technologies for improving its performance were discussed.

关 键 词：碳化硅金属氧化物半导体场效应晶体管 栅氧可靠性 评估方法 极端工况 

分 类 号：TM56[电气工程—电器]