GaN中子探测器研究进展  

Research Progress of GaN Neutron Detector

作　　者：相传峰 周春芝 孙涛 王利斌 席善学 李海俊 王善强 XIANG Chuanfeng;ZHOU Chunzhi;SUN Tao;WANG Libin;XI Shanxue;LI Haijun;WANG Shanqiang(State Key Laboratory of NBC Protection for Civilian,Beijing 102205,China)

机构地区：[1]国民核生化灾害防护国家重点实验室,北京102205

出　　处：《防化研究》2024年第3期13-22,共10页CBRN DEFENSE

基　　金：国家重点研究发展计划项目(2022YFB3608604);国家自然科学基金项目(62134006)。

摘　　要：GaN半导体具有禁带宽度大、耐高温、耐辐射、击穿电压高、饱和电子迁移率高等优点,在核辐射监测、深空探测、核事故应急等领域有重要的应用潜力。本文阐述了GaN半导体中子探测器的基本性质和国内外研究进展,从探测器结构、材料缺陷类型、中子转换材料等角度重点介绍了GaN中子探测器的发展现状,总结了制约GaN中子探测器应用的关键问题,展望了GaN半导体在中子探测领域的发展趋势。GaN semiconductors have some advantages such as wide bandgap,high temperature resistance,radiation resistance,high breakdown voltage,and high saturated electron mobility.These properties make GaN semiconductors promising for applications in nuclear radiation detection,deep space exploration,and nuclear accident response.This paper provided an overview of the basic properties of GaN semiconductor neutron detectors,the current research landscape both domestically and internationally,and the development of GaN neutron detectors from aspects such as detector structure,material defects,and neutron conversion materials.The key challenges hindering the widespread use of GaN neutron radiation detectors were identified,and the future prospects of GaN semiconductors in neutron detection were discussed.

关 键 词：GAN 辐射探测器 宽禁带半导体 中子探测器 

分 类 号：TL81[核科学技术—核技术及应用]