射频磁控溅射制备CdS薄膜性质研究  

Properties of CdS thin films prepared by radiofrequency magnetron sputtering

作　　者：王昊民 管雪 顾广瑞[1] WANG Haomin;GUAN Xue;GU Guangrui(College of Science,Yanbian University,Yanji 133002,China)

机构地区：[1]延边大学理学院,吉林延吉133002

出　　处：《延边大学学报（自然科学版）》2024年第2期31-38,共8页Journal of Yanbian University（Natural Science Edition）

基　　金：国家自然科学基金(51272224);吉林省自然科学基金(20210101163JC)。

摘　　要：利用射频磁控溅射技术,在玻璃和Si(111)的基板上沉积CdS薄膜,并研究了溅射功率对薄膜的结构、光学和电学特性等影响.X射线衍射结果表明,在不同溅射功率下制备的CdS薄膜样品,均表现为在(002)方向择优生长,其晶粒尺寸和表面粗糙度均随溅射功率的增大而增大.透射光谱分析表明,CdS薄膜在近红外光区域具有较大的透射率.对Tauc曲线进行分析显示,薄膜的带隙随溅射功率的增大而减小.霍尔效应测试表明,薄膜的电阻率随着溅射功率的增加而降低,而载流子浓度则随着溅射功率的增加而增大.研究结果可为CdS薄膜在光电器件方面的应用提供参考.In this paper,CdS thin film is deposited on glass and Si(111)substrates by using radiofrequency magnetron sputtering technology,and the effects of sputtering power on the structural,optical and electrical properties of the films are studied.The X-ray diffraction results show that the CdS thin films prepared under different sputtering powers are preferentially grown in the(002)direction,and their grain size and surface roughness increase with the increase of sputtering power.Transmission spectroscopy analysis shows that the CdS thin film has a large transmittance in the near-infrared region.The results of Tauc curve show that the band gap of the films decreases with the increase of sputtering power.The Hall effect test shows that the resistivity of the films decreases with the increase of sputtering power,while the carrier concentration increases with the increase of sputtering power.The research results can provide a reference for the application of CdS thin films in optoelectronic devices.

关 键 词：CDS薄膜 射频磁控溅射 溅射功率 光学性质 电学性质 

分 类 号：O484.4[理学—固体物理]