一种在空气中运行稳定的界面保护型光学神经突触器件  

Interface-Protected Optical Synapse Device Operating Stably in Air

作　　者：李欣蔚 杨成东 苏琳琳 刘逸龙 Li Xinwei;Yang Chengdong;Su Linlin;Liu Yilong(School of Electronics and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,Jiangsu,China;School of Electronics and Information Engineering,Wuxi University,Wuxi 214105,Jiangsu,China)

机构地区：[1]南京信息工程大学电子与信息工程学院,江苏南京210044 [2]无锡学院电子信息工程学院,江苏无锡214105

出　　处：《光学学报》2024年第14期250-257,共8页Acta Optica Sinica

基　　金：国家自然科学基金(62106111);无锡市科技创新创业资金“太湖之光”科技攻关计划(K20231001);无锡学院引进人才科研启动项目(2021r011,2021r012)。

摘　　要：提出了利用在二氧化硅表面覆盖一层超薄(7 nm)致密的氮化硅来隔离空气中氧气的方法,氮化硅低的隧穿势垒能够保证电子通过并到达二氧化硅界面,形成电子捕获态。这样的器件设计极大地提高了器件在空气中的运行稳定性。此外,还模拟了突触可塑性行为。该设计不仅能够确保基于二氧化硅界面捕获的突触器件在空气中稳定地运行,而且能够为解决器件运行稳定性问题提供一种可行思路。Objective Neuromorphic computing,with its high parallelism,is considered a promising method for further improving the efficiency of integrated computing systems in the post-Moore era.As the fundamental components of hardware-based neuromorphic systems,analog synaptic devices have undergone considerable research progress in recent years.Among them,SiO_2 trapping-based synaptic devices have unique advantages in terms of system integration,such as easy fabrication and high CMOS process compatibility.However,the electrochemical activity of oxygen makes the electron-trapping states unstable in air,which leads to an unstable operation of the device in air.Here,we used an interfacial layer of Si_(3)N_(4) to block oxygen molecules and protect the trapped electrons at the SiO_(2) interface.The experimental results demonstrate the feasibility of this method.Based on the device with 7 nm Si_(3)N_(4),we mimicked some common synaptic plasticities,including EPSC,PPF,pulse duration-dependent plasticity,pulse number-dependent plasticity,and pulse frequency-dependent plasticity.In addition,by studying the device behaviors with different Si_(3)N_(4)thicknesses,we discuss the interface protection mechanism of Si_(3)N_(4).Methods Considering that the device relies on SiO_(2) interface trapping to maintain a nonvolatile state,the physical protection of the interface is a reasonable approach to minimize damage to the trapped state.In addition,another requirement for the blocking layer is to allow only the electron to tunnel through itself;hence,it is possible to prevent the penetration of oxygen molecules while simultaneously maintaining electron trapping at the SiO_(2) interface.Based on this concept,we used ultrathin and dense Si_(3)N_(4) as the blocking layer to ensure electron tunneling,whereas large-sized O_(2) was isolated.Subsequently,we grew an ultrathin and dense Si_(3)N_(4) layer on the SiO_(2) interface and constructed a device as shown in Fig.3(a).Results and Discussions A B-B SJ device is constructed using a symmetrical A

关 键 词：神经形态器件 肖特基二极管 界面捕获 界面保护 

分 类 号：TN303[电子电信—物理电子学]