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作 者:张昊 王御睿 高登 张宇 黄戈豪 曹为 马志斌[1,2] Zhang Hao;Wang Yurui;Gao Deng;Zhang Yu;Huang Gehao;Cao Wei;Ma Zhibin(School of Materials Science and Technology,Hubei Key Laboratory of Plasma Chemistry&Advanced Materials,Wuhan Institute of Technology,Wuhan 430073,Hubei,China;School of Physics and Electronic Information,Huanggang Normal University,Huanggang 438000,Hubei,China)
机构地区:[1]武汉工程大学材料科学与工程学院,湖北省等离子体化学与新材料重点实验室,湖北武汉430073 [2]黄冈师范学院物理与电信学院,湖北黄冈438000
出 处:《光学学报》2024年第14期336-343,共8页Acta Optica Sinica
基 金:国家自然科学基金(11575134);湖北省自然科学基金(2023AFB248)。
摘 要:通过在双基片台波导耦合微波等离子体化学气相沉积(MPCVD)装置上安装两组同轴型磁场线圈对微波等离子体进行调控。利用光学发射光谱法对磁场调控下的氢等离子体进行了原位在线诊断,研究了基片台间距为20 mm和30 mm时,均匀磁场对等离子体形状、基团空间分布及电子温度的影响。结果表明:在工作气压为400 Pa时,均匀磁场的存在使等离子体沿着垂直于磁场的方向膨胀,平行于磁场的方向被压缩,从而导致等离子体从圆球形转变为椭球形。基片台间距为30 mm时,在均匀磁场作用下等离子体中H_α、H_β基团沿径向分布的均匀性得到显著提高。同时,由于磁场的加入,等离子体电子温度沿着基片径向的分布也更均匀。Objective Microwave plasma is widely used in the fields of material processing,surface treatment,and thin film deposition due to its advantages of electrodeless discharge,high plasma density,and strong group activity.The application of magnetic field is one of the effective means to regulate and optimize the plasma properties.By applying magnetic field,the trajectory of electrons in the plasma can be influenced,which in turn affects the density,temperature distribution,and energy distribution of the plasma.Consequently,this can control,to some extent,the chemical reaction rate and pathway of the plasma.In addition,magnetic fields can be used to improve the stability of the plasma and to increase the interaction region between the plasma and matter,thus expanding its application prospects in scientific research and industrial applications.For instance,the regulation of microwave electron cyclotron resonance (ECR) plasma by magnetic fields can obtain high-density,wide-range low-temperature plasma.Electron cyclotron resonance-microwave plasma chemical vapor deposition (ECR-MPCVD) in order to make the free range of electrons is long enough to ensure the electron cyclotron resonance,and the working air pressure is generally controlled at 10^(-3)^(1) Pa.In the process of conventional MPCVD preparation of diamond and other thin-film materials,the lower working pressure poses certain challenges and difficulties in controlling the growth rate and temperature of the thin films.Under higher pressure,microwave plasma tends to congregate,significantly reducing the uniformity of radical spatial distribution.Therefore,it is necessary to continuously investigate and explore the strategies,patterns,and mechanisms of the magnetic field regulation of microwave plasma at different working pressures.Currently,there are few reports on the regulation of microwave plasma by magnetic fields at hectopascal levels (≥100 Pa).Methods In order to regulate the microwave plasma,two sets of coaxial magnetic field coils were installed on a reac
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