Weak UV‑Stimulated Synaptic Transistors Based on Precise Tuning of Gallium‑Doped Indium Zinc Oxide Nanofibers  

作　　者：Yuxiao Wang Ruifu Zhou Haofei Cong Guangshou Chen Yanyan Ma Shuwen Xin Dalong Ge Yuanbin Qin Seeram Ramakrishna Xuhai Liu Fengyun Wang 

机构地区：[1]College of Physics and State Key Laboratory of Bio Fibers and Eco Textiles,Qingdao University,Qingdao 266071,China [2]College of Electronics and Information,Qingdao University,Qingdao 266071,China [3]School of Materials Science and Engineering,Xi’an Jiaotong University,Xi’an 710000,China [4]Center for Nanofibers&Nanotechnology Department of Mechanical Engineering,National University of Singapore,Singapore 117574,Singapore

出　　处：《Advanced Fiber Materials》2023年第6期1919-1933,共15页先进纤维材料（英文）

基　　金：the by the Natural Science Foundation of Shandong Province,China(ZR2020QF104);Key Research and Development Program of Shandong Province,China(2019GGX102067).

摘　　要：In this work,a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides(IGZO)is demonstrated.The introduction of gallium into the nanofiber lattice can effectively alter the morphology and crystallinity,leading to a wider regulatory range of synaptic plasticity.The fabricated IGZO synaptic transistor with the optimal gallium concentration and low surface defects exhibits a superior photoresponsivity of 4300 A・W^(−1)and excellent photosensitivity,which can detect light signals as weak as 0.03 mW・cm^(−2).In particular,the paired-pulse facilitation index reaches up to 252%with over 2 h of enhanced memory retention exhibiting the long-term potentiation.Furthermore,the simulated image contrast and image recognition accuracy based on the newly designed IGZO synaptic transistors are successfully enhanced.These remarkable behaviors of light-stimulated synapses utilizing low-cost electrospun nanofibers have potential for ultraweak light applications in future artificial systems.

关 键 词：INGAZNO NANOFIBER Artificial synaptic transistor Ultraviolet Photoresponsivity Phase transformation 

分 类 号：TB383[一般工业技术—材料科学与工程]