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INGAZNO: 作品数：43被引量：44H指数：3; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：廖聪维黄生祥邓联文罗衡覃婷更多>>; 相关机构：东南大学中南大学华南理工大学西安交通大学更多>>; 相关期刊：《液晶与显示》《Science China(Information Sciences)》《中南大学学报（自然科学版）》《Journal of Wuhan University of Technology(Materials Science)》更多>>; 相关基金：国家自然科学基金中央高校基本科研业务费专项资金国家重点基础研究发展计划湖南省科技计划项目更多>>

Effect of Interdigitated Electrode Spacing on the Performance of Flexible InGaZnO Ultraviolet Photodetectors: 《Journal of Wuhan University of Technology(Materials Science)》2025年第2期307-315,共9页LI Yuanjie ZHAO Yuqing ZHU Xuan; Funded by the Research Project of Shenzhen Science and Technology Innovation Committee(No.JCYJ20180306170801080)。; Planar-structured amorphous InGaZnO(a-IGZO)film-based UV photodetectors with different ITO interdigitated electrode spacings were developed on flexible PI substrates via radio frequency magnetron sputtering and non-li...; 关键词：amorphous InGaZnO thin films wearable electronics UV photodetectors magnetron sputtering transparent conducting oxides

Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode: 《发光学报》2025年第3期412-420,共9页JIA Bin TONG Xiaowen HAN Zikang QIN Ming WANG Lifeng HUANG Xiaodong; 国家重点研发计划(2020YFB2007400);国家自然科学基金(61974026)。; Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hin...; 关键词：INGAZNO Schottky barrier diode oxygen vacancy rectifying performance

InGaZnO-based photoelectric synaptic devices for neuromorphic computing: 《Journal of Semiconductors》2024年第9期42-47,共6页Jieru Song Jialin Meng Tianyu Wang Changjin Wan Hao Zhu Qingqing Sun David Wei Zhang Lin Chen; supported by the National Key Research and Development Program of China (2021YFA1202600);the NSFC (92064009, 22175042);the Science and Technology Commission of Shanghai Municipality (22501100900);the China Postdoctoral Science Foundation (2022TQ0068, 2023M740644);the Shanghai Sailing Program (23YF1402200, 23YF1402400);the Qilu Young Scholar Program of Shandong University。; Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InG...; 关键词：INGAZNO artificial synapse neuromorphic computing photoelectric memristor

脉冲对InGaZnO薄膜晶体管性能的影响: 《液晶与显示》2024年第4期466-471,共6页丘鹤元谢鑫李宗祥陈周煜王宝强王文超刘正刘耀刘娜妮王洋; 超大尺寸IGZO(InGaZnO)产品在高温高湿(50℃/80%)信赖性评价中易发生异常显示不良(Abnormal Display,AD)。其不良原因主要是集成栅极驱动电路(Gate Driver On Array,GOA)的关键器件M2转移特性曲线(IDS-VGS)在评价中发生了严重正移。本...; 关键词：InGaZnO薄膜晶体管集成栅极驱动电路异常显示阈值电压漂移

Weak UV‑Stimulated Synaptic Transistors Based on Precise Tuning of Gallium‑Doped Indium Zinc Oxide Nanofibers被引量：2: 《Advanced Fiber Materials》2023年第6期1919-1933,共15页Yuxiao Wang Ruifu Zhou Haofei Cong Guangshou Chen Yanyan Ma Shuwen Xin Dalong Ge Yuanbin Qin Seeram Ramakrishna Xuhai Liu Fengyun Wang; the by the Natural Science Foundation of Shandong Province,China(ZR2020QF104);Key Research and Development Program of Shandong Province,China(2019GGX102067).; In this work,a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides(IGZO)is demonstrated.The introduction of gallium into the nanofiber lattice can ef...; 关键词：INGAZNO NANOFIBER Artificial synaptic transistor Ultraviolet Photoresponsivity Phase transformation

Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications被引量：1: 《Science China(Information Sciences)》2023年第10期57-79,共23页Shengzhe YAN Zhaori CONG Nianduan LU Jinshan YUE Qing LUO; supported in part by National Key R&D Program(Grant No.2018YFA0208503);National Natural Science Foundation of China(Grant Nos.92264204,61890944);China Postdoctoral Science Foundation(Grant No.2021M703444)。; In the past several decades,the density and performance of transistors in a single chip have been increasing based on Moore's Law.However,the slowdown of feature size reduction and memory wall in the von Neumann archi...; 关键词：IGZO FET 2T0C DRAM high density compact modeling computing-in-memory monolithic 3D integration

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors: 《Journal of Semiconductors》2023年第9期57-61,共5页Yanxin Wang Jiye Li Fayang Liu Dongxiang Luo Yunping Wang Shengdong Zhang Lei Lu; supported by National Key Research and Development Program under Grant No.2022YFB3607100;Shenzhen Research Programs under Grant Nos.JCYJ20200109140601691,JCYJ20190808154803565,SGDX20201103095607022,SGDX20211123145404006,and GXWD20201231165807007-20200807025846001。; As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this w...; 关键词：amorphous indium-gallium-zinc oxide(a-IGZO) thin-film transistors(TFTs) current stress self-heating(SH) FLUORINATION

Optimization of electrical performance and stability of fully solution-driven α-InGaZnO thin-film transistors by graphene quantum dots: 《Journal of Materials Science & Technology》2023年第10期100-109,共10页Xiaofen Xu Gang He Leini Wang Wenhao Wang Shanshan Jiang Zebo Fang; supported by the National Natural Science Foundation of China(No.11774001);the Anhui Project(No.Z010118169);the Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University(No.MEMSZ-JERC2202).; This work presents solution-processed high-performance graphene quantum dots(GQDs)decorated amor-phous InGaZnO(α-IGZO)thin-film transistors(TFTs)based on ZrO x as gate dielectrics.Compare with pure IGZO TFTs,GQDs-mod...; 关键词：Thin-film transistor α-InGaZnO Graphene quantum dots STABILITY

高可靠性InGaZnO薄膜晶体管集成栅极驱动电路的研究被引量：1: 《电子学报》2022年第12期3014-3020,共7页周刘飞邵贤杰陈旭王海宏王保平; InGaZnO薄膜晶体管(InGaZnO Thin Film Transistor,IGZO TFT)具有高迁移率特性,易实现高分辨率且高刷新率的有源矩阵液晶显示(Liquid Crystal Displays,LCD).然而,由于IGZO TFT长期运行后较严重的性能下降,集成栅极驱动电路(Gate Driver...; 关键词：InGaZnO薄膜晶体管集成栅极驱动阈值电压漂移双极性脉冲偏压可靠性拉伸-指数方程

Erratum to: Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint: 《Nano Research》2021年第7期2469-2469,共1页Chaoqi Dai Peiqin Chen Shaocheng Qi Yongbin Hu Zhitang Song Mingzhi Dai; The article "Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint" written by Chaoqi Dai,Peiqin Chen,Shaocheng Qi,Yongbin Hu,Zhitang Song,and Mingzhi Dai,was er...; 关键词：TRANSISTOR INGAZNO FUNCTIONS

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