Erratum to: Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint  

作　　者：Chaoqi Dai Peiqin Chen Shaocheng Qi Yongbin Hu Zhitang Song Mingzhi Dai 

机构地区：[1]College of Materials Science and Engineering,Kunming University of Science and Technology,Kunming 650093,China [2]Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China [3]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [4]Shanghai Microsystem and Information Technology Institute,Chinese Academy of Sciences,Shanghai 200433,China

出　　处：《Nano Research》2021年第7期2469-2469,共1页纳米研究（英文版）

摘　　要：The article "Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint" written by Chaoqi Dai,Peiqin Chen,Shaocheng Qi,Yongbin Hu,Zhitang Song,and Mingzhi Dai,was erroneously originally published electronically on the publisher’internet portal(currently SpringerLink)on 30 September 2020 with caption of Fig.1 and related context,and the Acknowledgements.

关 键 词：TRANSISTOR INGAZNO FUNCTIONS 

分 类 号：TB3-5[一般工业技术—材料科学与工程]