Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode  

氧空位对非晶InGaZnO基肖特基势垒二极管性能的影响

作　　者：JIA Bin TONG Xiaowen HAN Zikang QIN Ming WANG Lifeng HUANG Xiaodong 贾斌;童晓闻;韩子康;秦明;王立峰;黄晓东(东南大学集成电路学院,江苏南京210096;东南大学电子科学与工程学院,江苏南京210096)

机构地区：[1]School of Integrated Circuits,Southeast University,Nanjing 210096,China [2]School of Electronic Science&Engineering,Southeast University,Nanjing 210096,China

出　　处：《发光学报》2025年第3期412-420,共9页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2020YFB2007400);国家自然科学基金(61974026)。

摘　　要：Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.整流电路作为交流转换直流的关键组件,在能量收集微系统中发挥着关键作用。传统硅基或锗基整流二极管因其特殊的制造工艺,阻碍了系统集成。相比之下,金属氧化物二极管凭借其简单的制备技术,在系统集成方面展现出优势。氧化物半导体的氧空位缺陷会对器件的电学性能产生很大影响,因此通过调节氧空位浓度可以有效调控二极管的性能。为优化二极管性能,本研究通过调整溅射过程中的氧气流量,有效调控InGaZnO薄膜中的氧空位浓度。实验结果显示,该二极管在1 V电压下具有43.82 A·cm^(−2)的正向电流密度,器件整流比为6.94×10^(4),能够高效整流1 kHz、5 V的输入正弦信号,彰显了其在能量转换与管理方面的巨大潜力。通过调控氧空位,为优化整流二极管性能提供了思路和方法。

关 键 词：INGAZNO Schottky barrier diode oxygen vacancy rectifying performance 

分 类 号：TN311.7[电子电信—物理电子学]