N型MOSFET器件总剂量效应通用测试系统设计  

Design of a Universal Testing System for Total Ionizing Dose Effect of N-type MOSFET

作　　者：郭荣 梁润成 李国栋[1] 郑智睿 孙丹 韩毅[1] 郝焕锋 陈法国[1,2] 闫学文 GUO Rong;LIANG Runcheng;LI Guodong;ZHENG Zhirui;SUN Dan;HAN Yi;HAO Huanfeng;CHEN Faguo;YAN Xuewen(China Institute for Radiation Protection,Taiyuan 030006,China;Shanxi Provincial Key Laboratory for Translational Nuclear Medicine and Precision Protection,Taiyuan 030006,China)

机构地区：[1]中国辐射防护研究院,太原030006 [2]核药研发转化及精准防护山西省重点实验室,太原030006

出　　处：《核电子学与探测技术》2024年第4期622-630,共9页Nuclear Electronics & Detection Technology

基　　金：山西省基础研究计划项目(202203021222407);山西省应用基础研究计划(20210302124486)。

摘　　要：抗辐照电机驱动器研发需要准确获取电桥电路金属-氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)器件的总剂量效应失效阈值,电流-电压、电容-电压等离线测试方法,无法真实反映器件开关性能随累积剂量增加的连续变化过程。因此,针对MOSFET器件总剂量效应的在线测试需求,设计了基于高速信号采集及存储的通用化测试系统,具备被测样品驱动、高频信号采集、高速数据存储、数据模块管理等功能。利用典型商用MOSFET器件开展了总剂量效应测试,结果显示,当吸收剂量达598.08±41.54 Gy(Si)时,样品采集方波波形开始出现异常,低电平电压升高至0.82 V,高电平电压始终正常;随着累积剂量的增大,低电平电压持续性升高至1.08 V,并进一步升高至1.24 V,但器件开关功能保持正常;当累积剂量达1775.41±219.68 Gy(Si)时,采集波形跳变为2.93 V的直线,无方波信号输出,经判断MOSFET开关功能完全受损。The development of radiation hardened motor drivers requires accurate acquisition of the total ionizing dose effect failure threshold of MOSFET devices used in the bridge circuits.However,the offline irradiation testing methods such as current-voltage measurement and capacitance-voltage measurement,which can not truly reflect the continuous changes in device switching performance during irradiation.Therefore,in response to the online testing requirements for the total dose effect of MOSFET devices,a universal testing system based on high-speed signal acquisition and storage was designed,which has functions such as sample driving,high-frequency signal acquisition,high-speed data storage,and data bad block management.A total ionizing dose effect test was conducted using typical commercial MOSFETs.The results showed that when the absorbed dose reached 598.08±41.54 Gy(Si),the square wave waveform of samples changed significantly,in which the low level voltage rising to 0.82 V,and high level remained normal.As the absorbed dose increases,the low-level voltage continuously increases to 0.82 V and further increases to 1.08 V and 2.4 V,while the switch function remained normal.When the absorbed dose reaches 1775.41±219.68 Gy(Si),the collected waveform jumps to a straight line of 2.93 V,with no square wave signal output.It is believed that the MOSFET switch function is completely damaged.

关 键 词：N型MOSFET 总剂量效应 失效阈值 测试系统 

分 类 号：TN432[电子电信—微电子学与固体电子学]