使用晶圆级键合技术制备金属微结构  

Fabrication of Metal Microstructure by Wafer Level Bonding Techniques

作　　者：廖承举 张剑 卢茜[1] 彭挺[1] 林玉敏[1] 赵明 LIAO Chengju;ZHANG Jian;LU Qian;PENG Ting;LIN Yumin;ZHAO Ming(The 29th Research Institute of CETC,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第二十九研究所,成都610036

出　　处：《电子工艺技术》2024年第5期4-7,20,共5页Electronics Process Technology

摘　　要：使用金属材料的晶圆级键合技术可以制备半封闭结构的金属矩形微同轴线。基于柔性金属衬底的晶圆级键合技术,制备了金属矩形微同轴结构。通过选择合适的对准标记和键合工艺,实现了≤10 μm的对准误差。通过多个金属矩形微同轴线的微组装,初步展示了使用单层金属矩形微同轴线构建射频开关矩阵单元的能力。Metal micro rectangular coaxial transmission lines of semi-closed structure can be fabricated by wafer level bonding technique of metallic materials.The metal micro rectangular coaxial structure is prepared using wafer level bonding technique based on flexible metal substrates.By utilizing appropriate alignment marks and bonding process,alignment error less than 10 μm has been achieved.In addition,the ability of constructing the RF switch matrix is demonstrated through micro assembling multiple single-layer metal micro rectangular coaxial transmission lines.

关 键 词：晶圆级键合技术 金属微结构 矩形微同轴线 3D MERFS 

分 类 号：TN605[电子电信—电路与系统]