O含量对(FeCoCrNiAlRe)O_(x)高熵氧化物扩散障性能的影响  

Effect of O Content on Diffusion Barrier Properties of(FeCoCrNiAlRe)O_(x) High-Entropy Oxides

作　　者：张力文 张丽 张伟强[1] ZHANG Liwen;ZHANG Li;ZHANG Weiqiang(School of Materials Science and Engineering,Shenyang Ligong University,Shenyang Liaoning 110159,China)

机构地区：[1]沈阳理工大学材料科学与工程学院,辽宁沈阳110159

出　　处：《辽宁化工》2024年第8期1146-1151,共6页Liaoning Chemical Industry

基　　金：2022年度教育厅基本科研项目面上项目,Co-Cr-Ni-Si系中熵合金制备技术及塑性变形行为研究(项目编号:LJKMZ20220592)。

摘　　要：用磁控溅射在单晶硅基底上沉积了(FeCoCrNiAlRe)O_(x)高熵氧化物陶瓷类薄膜,并探究不同O含量对在700℃退火温度下对Cu-Si互扩散的阻挡能力。采用SEM扫描电镜、EDS能谱仪、XRD衍射仪对薄膜进行表征。结果表明:(FeCoCrNiAlRe)O_(x)高熵氧化物薄膜质地较为致密,元素分布均匀,不同氧含量下制备的高熵氧化物薄膜均为非晶结构,且对Cu-Si的扩散有较好的阻扩散能力。(FeCoCrNiAlRe)O_(x) high-entropy oxide ceramic thin films were deposited on monocrystalline silicon substrate by magnetron sputtering,and the resistance of different O contents to Cu-Si interdiffusion at 700℃ annealing temperature was investigated.The films were characterized by SEM,EDS and XRD.The results showed that the high-entropy oxide thin films of(FeCoCrNiAlRe)O_(x) were dense in texture and uniform in element distribution.The high-entropy oxide thin films prepared with different oxygen contents were amorphous and had good diffusion resistance to Cu-Si.

关 键 词：高熵氧化物薄膜 扩散障 磁控溅射 Cu-Si扩散 

分 类 号：TG174.4[金属学及工艺—金属表面处理]