硒化锡/2H相碲化钼异质结的外延生长  

Epitaxial Growth of SnSe_(2)/2H-MoTe_(2) Heterojunction

作　　者：邓雷航 张礼杰 DENG Leihang;ZHANG Lijie(College of Chemistry and Meterial Engineering,Wenzhou University,Wenzhou 325000,China)

机构地区：[1]温州大学化学与材料工程学院,浙江温州325000

出　　处：《化工技术与开发》2024年第9期42-48,53,共8页Technology & Development of Chemical Industry

摘　　要：具有原子光滑表面和特殊层间范德瓦尔斯耦合的二维层状材料的性质与传统材料不同。由于二维层状材料的清洁表面上没有悬空键,因此在晶圆上集成各种二维材料,可以丰富器件的功能。另外,经由二维材料的添加剂生长而形成异质结构,可以构建具有非常规性质的材料。两者都可以通过材料的转移来实现,但在转移的过程中要避免机械损伤或化学污染。高质量二维材料的直接生长通常需要高温,抑制添加剂的生长,或与不同的二维材料进行整体结合,近年来得到了广泛的研究,并有望在未来的集成电子学和光电子学中发挥关键作用。所使用的范德瓦尔斯积分技术,为将不同的二维材料甚至不同的晶体结构集成到异质结构中提供了一种可行的方法,也为探索具有新性能的新型人工材料提供了一个很有前途的平台。本文首次通过两步化学气相沉积的方法,成功地将二硒化锡纳米片与2H相的碲化钼薄膜结合成了p-n异质结。高分辨率透射电镜表征结果表明,多层二硒化锡纳米片垂直堆叠在具有高结晶度的2H相碲化钼薄膜上。材料的拉曼图谱也验证了SnSe_(2)/2H-MoTe_(2)异质结构的形成。The properties of two-dimensional layered materials with atomically smooth surfaces and special interlayer van der Waals coupling were different from those of conventional materials.Since the clean surface of the two-dimensional layered material had no overhang bonds,the integration of various two-dimensional materials on the wafer enabled a method that exceeded the molar value to enrich the function of the device.On the other hand,the additive growth of two-dimensional materials formed heterogeneous structures,allowed the construction of materials with unconventional properties.Both could be achieved through material transfer,but mechanical damage or chemical contamination could usually be avoided during the transfer process.Direct growth of high quality 2D materials usually required high temperatures that hindered the growth of additives or the overall combination of different 2D materials had been extensively studied in recent years and was expected to play a key role in future integrated electronics and optoelectronics.The van der Waals integration technique provided a feasible method for integrating different two-dimensional materials or even with different crystal structures into heterogeneous structures,and provided a promising platform for exploring new artificial materials with new properties.Here,for the first time,we successfully combined tin diselenide nanosheets with 2H phase molybdenum telluride films to form p-n heterojunction by two-step chemical vapor deposition.The results of high-resolution transmission electron microscopy showed that multilayer tin diselenide nanosheets were vertically stacked on a 2H phase molybdenum telluride film with high crystallinity.The SnSe_(2)/2H-MoTe_(2) heterostructure was also verified by Raman diagram.

关 键 词：二维材料 化学气相沉积 异质结 范德瓦尔斯接触 

分 类 号：TQ134.32[化学工程—无机化工] TN36[电子电信—物理电子学]