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作 者:王伟新[1] 张丽娜[1] WANG Weixin;ZHANG Lina(Department of Stomatology,the First Affiliated Hospital of Xinxiang Medical College,Xinxiang 453100)
机构地区:[1]新乡医学院第一附属医院口腔科,河南新乡453100
出 处:《河南医学研究》2024年第18期3338-3341,共4页Henan Medical Research
摘 要:目的回顾性对比半导体激光术与高频电刀手术治疗牙龈瘤患者的效果。方法收集新乡医学院第一附属医院2021年5月至2023年10月收治的60例牙龈瘤患者的临床资料,依照手术方式分为两组。激光组(30例)接受半导体激光术治疗,电刀组(30例)接受高频电刀手术治疗,比较两组术后2周临床治疗效果、手术相关指标(手术时间、术中失血量)、不同时间点(术前及术后12、24、48 h)疼痛程度[视觉模拟评分(VAS)]、术前及术后1周龈沟液炎症因子水平[超敏C反应蛋白(hs-CRP)、白细胞介素-1β(IL-1β)、肿瘤坏死因子-α(TNF-α)]、并发症。结果两组术后2周治疗有效率、总并发症发生率差异无统计学意义(P>0.05);激光组手术时间较电刀组长,术中失血量较电刀组少(P<0.05);两组VAS评分的时间、组间、交互效应有统计学意义(P<0.05),同时随着时间推移呈降低趋势,且激光组低于电刀组(P<0.05);术后1周,两组龈沟液hs-CRP、IL-1β、TNF-α水平均降低,且激光组低于电刀组(P<0.05)。结论半导体激光术与高频电刀手术治疗牙龈瘤的效果相当,但与高频电刀手术相比,半导体激光术的手术时间稍长,而术中失血量少,疼痛程度轻,并能降低龈沟液炎症因子表达水平。Objective To retrospectively compare the effect of semiconductor laser and high-frequency electrotome in the treatment of patients with gingival tumor.Methods Clinical data of 60 patients with gingival tumor in the First Affiliated Hospital of Xinxiang Medical College from May 2021 to October 2023 were collected and divided into two groups according to the surgical methods.The laser group(30 cases)received semiconductor laser treatment,and the electrosurgical group(30 cases)received high-frequency electrosurgical treatment.The clinical treatment effect,surgical indicators(operation time,intraoperative blood loss),pain degree at different time points(preoperative,postoperative 12,24 and 48 hours),visual analogue scale(VAS)were compared between the two groups two weeks after surgery.The levels of gingival creval fluid inflammatory factors[hypersensitive C-reactive protein(hs-CRP),interleukin-1β(IL-1β),tumor necrosis factor-α(TNF-α)]and complications were compared between the two groups before and one week after surgery.Results There were no statistical differences between the two groups in the effective rate and the total complication rate two weeks after operation(P>0.05).The operation time of the laser group was longer than that of the electrosurgical group,and the intraoperative blood loss was less than that of the electrosurgical group(P<0.05).The time,inter group and interaction effects of VAS scores between the two groups were statistically significant(P<0.05),and showed a decreasing trend over time,and the laser group was lower than the electrosurgical group(P<0.05).One week after operation,the levels of hs-CRP,IL-1βand TNF-αin gingival crevicular fluid were decreased in both groups,and the levels of the laser group were lower than those of the electrosurgical group(P<0.05).Conclusion Semiconductor laser surgery has the same effect as high-frequency electrosurgical surgery in the treatment of gingival tumor,but compared with high-frequency electrosurgical surgery,semiconductor laser surgery has a sligh
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