超宽带硅基射频微系统设计  

Design of an Ultra-wideband RF Microsystem Based on Silicon Interposer

作　　者：张先荣[1] 钟丽[2] ZHANG Xianrong;ZHONG Li(Southwest China Institute of Electronic Technology,Chengdu 610036,China;College of Electronic Information Engineering,Chengdu Polytechnic,Chengdu 610041,China)

机构地区：[1]中国西南电子技术研究所,成都610036 [2]成都职业技术学院电子信息工程学院,成都610041

出　　处：《电讯技术》2024年第9期1507-1515,共9页Telecommunication Engineering

基　　金：装发部预先研究基金。

摘　　要：针对超宽带硅基射频模块的微系统化问题,采用硅基板作为转接板设计了一款具备收发功能的超宽带系统级封装(System in Package,SiP)射频微系统。各层硅基转接板之间的射频信号传输、控制和供电等均采用低损耗的硅通孔(Through Silicon Via,TSV)结构来实现。为了减小封装对射频性能的影响,整个超宽带射频微系统采用5层硅基封装结构,与传统二维封装结构相比,其体积减少95%以上。射频微系统封装完成后,对其电气性能指标进行了测试。在整个超宽带频带内,其接收噪声系数小于2.6 dB,增益大于35 dB,发射功率大于等于34 dBm,端口驻波小于2。该封装结构实现了硅基超宽带射频模块的微系统化,可广泛适用于各类超宽带射频系统。In response to the challenge of microsystemization in ultra-wideband(UWB)silicon-based radio frequency(RF)modules,a UWB system in package(SiP)RF microsystem with transmitting and receiving functions is designed by using a silicon substrate as an interposer.The RF signal transmission,control and power supply between each layer of silicon-based interposers are all achieved by using a low-loss through silicon via(TSV)structure.In order to reduce the impact of packaging on RF performance,the entire UWB RF microsystem adopts a 5-layer silicon-based packaging structure,which reduces its size more than 95% compared with traditional two-dimensional packaging structures.After the RF microsystem is completed,its electrical performance indicators are measured.Within the entire UWB frequency band,the received noise figure is less than 2.6 dB,the gain is greater than 35 dB,the transmission power is greater than or equal to 34 dBm,and the port voltage standing wave ratio(VSWR)is less than 2.The packaging structure realizes the microsystematization of silicon-based UWB RF modules,which can be widely used in various types of UWB RF systems.

关 键 词：超宽带射频微系统 硅基转接板 硅通孔(TSV) 系统级封装(SiP) 

分 类 号：TN402[电子电信—微电子学与固体电子学]