超宽带高线性Sub6G增益模块  

Ultra Wideband High Linear Sub6G Gain Block

作　　者：王慷 WANG Kang(College of Electronic Engineering,Chengdu University of Information Technology,Chengdu 610225,China)

机构地区：[1]成都信息工程大学电子工程学院,四川成都610225

出　　处：《成都信息工程大学学报》2024年第5期567-570,共4页Journal of Chengdu University of Information Technology

摘　　要：基于2μm GaAs HBT(砷化镓异质结双极型晶体管)工艺设计一款单片微波集成电路射频放大器芯片。整个电路采用达林顿拓扑结构,并在片上实现输入输出匹配。针对达林顿结构放大器线性度低的问题,通过设计有源偏置,提高芯片线性度和输出功率,稳定输入阻抗,降低电路的温度敏感性。A monolithic microwave integrated circuit RF amplifier chip is designed based on a 2μm GaAs HBT.The entire circuit adopted a Darlington topology and achieves input-output matching on-chip.Aiming at the low linearity of the Darlington amplifier,the active bias was designed to improve the chip linearity and output power,make the input impedance stable,and reduce the temperature sensitivity of the circuit.

关 键 词：达林顿放大器 HBT 宽带 有源偏置 MMIC 

分 类 号：TN721[电子电信—电路与系统]