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作 者:李博夫 段士华 韩顺枫 李大猛 杨宝斌 张娜 李德建 Li Bofu;Duan Shihua;Han Shunfeng;Li Dameng;Yang Baobin;Zhang Na;Li Dejian(Bejing Smartchip Microelectronics Technology Co.,Ltd.,Bejing 102200,China;State Grid Shanxi Electric Power Research Institute,Taiyuan 030001,China;School of Integrated Circuits,Tsinghua University,Beijing 100084,China)
机构地区:[1]北京智芯微电子科技有限公司 [2]国网山西省电力公司电力科学研究院 [3]清华大学集成电路学院
出 处:《半导体技术》2024年第10期940-945,共6页Semiconductor Technology
基 金:国家电网有限公司总部管理科技项目(5700-202341842A-4-4-ZX)。
摘 要:工业级芯片因为高温应用环境的需求,对芯片封装的热管理提出了更高的要求。芯片的漏电流随温度的升高而呈指数级增大的特点,导致高温静态功耗成为影响芯片结温的关键因素,因此有必要在优化动态功耗的基础上,进一步管控静态功耗。基于不同温度下的晶圆漏电流测试,建立了芯片常温漏电流与高温总功耗的关系,提出了基于芯片结温阈值的常温漏电流筛选机制。搭建了芯片热测试实验平台,验证了漏电流筛选的准确性。实现了基于常温的晶圆测试来快速准确地剔除在高温下总功耗超标的芯片,对提高工业级芯片的良率及质量具有重要意义。Due to the demand of high-temperature application environments,industrial grade chips have higher requirements for thermal management of chip packaging.The leakage current of the chip increases exponentially with the increase of temperature,which makes high-temperature static power consumption a key factor affecting the junction temperature of the chip.Therefore,it is necessary to further control the static power consumption based on optimizing the dynamic power consumption.Based on the wafer leakage current test at different temperatures,the relationship between room-temperature leakage current and high-temperature total power consumption was established.And the screening mechanism of room-temperature leakage current was proposed based on chip junction temperature threshold.The chip thermal test experimental platform was built to verify the accuracy of leakage current screening.Based on room-temperature wafer testing,it achieves removal of chips with excessive high total power consumption in high temperature rapidly and accurately,which is of great significance in improving the yield and quality of industrial grade chips.
分 类 号:TN407[电子电信—微电子学与固体电子学]
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