Efficient measurement and optical proximity correction modeling to catch lithography pattern shift issues of arbitrarily distributed hole layer  

作　　者：Yaobin FENG Jiamin LIU Zhiyang SONG Hao JIANG Shiyuan LIU 

机构地区：[1]State Key Laboratory of Inteligent Manufacturing Equipment and Technology,Huazhong University of Science and Technology,Wuhan 430074,China [2]Optics Valley Laboratory,Wuhan 430074,China

出　　处：《Frontiers of Mechanical Engineering》2024年第4期45-54,共10页机械工程前沿（英文版）

基　　金：funded by the National Natural Science Foundation of China(Grant Nos.52130504,52305577,and 52205592);the Key Research and Development Plan of Hubei Province,China(Grant No.2022BAA013);the Major Program(JD)of Hubei Province,China(Grant No.2023BAA008-2);the Innovation Projection of Optics Valley Laboratory,China(Grant No.OVL2023PY003);the Postdoctoral Fellowship Program(Grade B)of the China Postdoctoral Science Foundation(Grant No.GZB20230244).

摘　　要：With the continued shrinking of the critical dimensions(CDs)of wafer patterning,the requirements for modeling precision in optical proximity correction(OPC)increase accordingly.This requirement extends beyond CD controlling accuracy to include pattern alignment accuracy because misalignment can lead to considerable overlay and metal-via coverage issues at advanced nodes,affecting process window and yield.This paper proposes an efficient OPC modeling approach that prioritizes pattern-shift-related elements to tackle the issue accurately.Our method integrates careful measurement selection,the implementation of pattern-shift-aware structures in design,and the manipulation of the cost function during model tuning to establish a robust model.Confirmatory experiments are performed on a via layer fabricated using a negative tone development.Results demonstrate that pattern shifts can be constrained within a range of+1 nm,remarkably better than the original range of±3 nm.Furthermore,simulations reveal notable differences between post OPC and original masks when considering pattern shifts at locations sensitive to this phenomenon.Experimental validation confirms the accuracy of the proposed modeling approach,and a firm consistency is observed between the simulation results and experimental data obtained from actual design structures.

关 键 词：computational lithography optical proximity correction MODELING pattern shift metrology 

分 类 号：TN305.7[电子电信—物理电子学]