氮化镓功率器件在宇航电源中的发展与应用  

Development and application of GaN power devices in aerospace power supplies

作　　者：陈永刚 彭程 支书播 李廷中 万成安[1] CHEN Yonggang;PENG Cheng;ZHI Shubo;LI Tingzhong;WAN Chengan(Beijing Spacecrafts,China Academy of Space Technology,Beijing 100190,China)

机构地区：[1]中国空间技术研究院北京卫星制造厂有限公司,北京100190

出　　处：《电子设计工程》2024年第20期50-56,61,共8页Electronic Design Engineering

摘　　要：随着航天器功率需求不断增大,对宇航电源的效率提出了更高的要求。第三代宽禁带半导体—氮化镓(GaN)功率器件具有更低的导通损耗、纳秒量级的开关速度等优点,能够使宇航电源的效率得到进一步提高。该文分析了GaN功率器件的结构特性与电气性能优势,针对GaN功率器件在国内外宇航电源中的应用情况进行总结;并提出GaN功率器件以及高频电源在宇航环境中广泛使用面临的关键问题。分析认为GaN功率器件应侧重于单粒子辐照加固以及耐辐照稳定性驱动方案研究,而宇航电源的整体研究则应该关注高频电源集成技术以及散热问题。With the increasing power demand of spacecraft,the efficiency of astronautics power supplies have been put forward to higher requirements.The third-generation wide-band semiconductor,Gallium Nitride(GaN)power devices have the advantages of lower conduction loss and nanosecond switching speed,which can further improve the efficiency of spacecraft power supplies.The structural characteristics and electrical performance advantages of GaN power devices are analyzed,and the current research on GaN power devices in astronautics power supplies by domestic and international astronautics research institutions are discussed;and the key issues facing GaN power devices and high-frequency power supplies for widespread use in the astronautics environment are proposed.The analysis suggests that GaN power devices should focus on single-particle irradiation reinforcement and irradiation resistance stability driving scheme research,while the overall research of aerospace power supplies should focus on high-frequency power supply integration technology and heat dissipation problems.

关 键 词：氮化镓 宇航电源 辐照环境 高频化 散热 

分 类 号：TN3[电子电信—物理电子学]