不同线宽电流阻挡层的GaN基LED芯片光电特性研究  

Study on photoelectric characteristics of GaN-based LED chip with different linewidth current barrier layer

作　　者：田媛 刘叶锋 陈晓冰 王忠东 闫晓密 TIAN Yuan;LIU Yefeng;CHEN Xiaobing;WANG Zhongdong;YAN Xiaomi(College of Mathematics and Computer Science,Guangxi Science&Technology Normal University,Laibin 546199,China;Bridgelux(WuXi)Research and Development Company Limited,Wuxi 214000,China;Quantum Device Lab,ShanghaiTech University,Shanghai 201210,China)

机构地区：[1]广西科技师范学院数学与计算机科学学院,广西来宾546199 [2]普瑞(无锡)研发有限公司,江苏无锡214000 [3]上海科技大学量子器件中心,上海201210

出　　处：《传感器与微系统》2024年第10期38-41,共4页Transducer and Microsystem Technologies

基　　金：广西创新驱动发展专项项目(桂科AA21077018—2)。

摘　　要：发光二极管(LED)由于具有低功耗、小体积、宽光谱范围等优点,被广泛应用于可见光通信、光电医疗、快速无损检测等微系统领域。为了进一步提高LED的发光效率,在图形化蓝宝石衬底上制备了具有不同线宽电流阻挡层(CBL)的氮化镓(GaN)基LED,并研究其光电特性。结果表明,在120mA测试电流作用下,由于CBL的插入增大了有源层有效光发射区域的电流密度,减少了p电极(p-pad)下的寄生光吸收,LED芯片的辐射功率与光电转换效率随着CBL线宽的增加而单调增加,在CBL线宽设计为13μm时,辐射功率与光电转换效率达到最大;正向电压(VF)随着CBL线宽的增加略有增加,表明绝缘的CBL层增大串联电阻。本文为CBL线宽的选择提供了新思路,可有效提高LED的发光效率。Benefiting from its advantages of low power consumption,small size,wide spectral range,LED is widely used in the fields of micro-system such as visible light communication,optoelectronic medical treatment,rapid nondestructive testing,and so on.In order to further improve the luminous efficiency of LED,GaN-based LED is fabricated on the patterned sapphire substrates with different linewidth current barrier layer(CBL)and their photoelectric characteristics are studied.The results show that,under the test current of 120 mA,because CBL makes the effective light emission region of the active layer obtain a larger current density and reduces the parasitic light absorption at the p type electrode(P-Pad).The radiation power and electro-optic conversion efficiency of the LED chip increase monotonically with the increase of the linewidth of the CBL.When the linewidth of the CBL is designed to be 13μm,the radiation power and electro-optic conversion efficiency reach the maximum.The forward voltage(VF)increases slightly with the increase of CBL linewidth indicating that the CBL layer of insulation increases the series resistance.This study provides a new idea for the selection of CBL linewidth,which can effectively improve the luminous efficiency of LED.

关 键 词：发光二极管 电流阻挡层 氮化镓 发光效率 

分 类 号：TN312.8[电子电信—物理电子学]