ICP深硅刻蚀工艺研究  

Process Research for Inductively Coupled Plasma Deep Silicon Etching

作　　者：赵洋 高渊[1] 宋洁晶[1] ZHAO Yang;GAO Yuan;SONG Jiejing(The 13th Research Institute of CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《电子工业专用设备》2024年第5期42-46,共5页Equipment for Electronic Products Manufacturing

摘　　要：深硅刻蚀工艺是MEMS器件制造过程中的关键工艺之一。加速度计的梳齿结构、滤波器及压力传感器的硅腔结构都是决定器件性能的关键工艺,均需要通过深硅刻蚀制备。梳齿的垂直度以及硅腔的侧壁平整度均会对器件的性能产生直接影响。针对深硅刻蚀工艺中出现的形貌问题进行分析,找到影响硅草、侧壁垂直度差、底部横向钻蚀、侧壁钻蚀等问题的工艺参数。最后通过工艺参数优化,对这些问题进行改善,从而获得理想形貌,满足器件性能要求。Inductively coupled plasma(ICP)deep silicon etching is one of the key techniques in fabricating micro electromechanical system(MEMS)devices.The comb structure of the accelerometer,and the cavity of the filter and the pressure sensor are the key process which impact on the performance of the device.They both need to be prepared by deep silicon etching.The verticality of the comb structure and the smoothness of the cavity have a direct impact on the performance of the device.This paper analyzes the profile faults in the processing,and finds out the key parameters that affect the problems such as bowing notching and sidewall breakdown.Finally the problems are improved to obtain the ideal profile and meet the performance requirements through the optimization of process parameters.

关 键 词：深硅刻蚀 微机电系统 刻蚀形貌 感应耦合等离子刻蚀 

分 类 号：TN305.7[电子电信—物理电子学]