不同界面次序CoFeMnSi多层膜的磁各向异性  

Magnetic Anisotropy of CoFeMnSi Multilayer Films with Different Interface Sequences

作　　者：乔礼红 游才印[1] 付花睿 田娜[1] 白洋 刘小鱼 QIAO Lihong;YOU Caiyin;FU Huarui;TIAN Na;BAI Yang;LIU Xiaoyu(School of Materials Science and Engineering,Xi’an University of Technology,Xi’an 710048,China;Center for New Rare Earth Material Technology Research and Development,Baotou 014020,Inner Mongolia,China)

机构地区：[1]西安理工大学材料科学与工程学院,西安710048 [2]包头稀土新材料技术研发中心,内蒙古包头014020

出　　处：《材料导报》2024年第18期136-141,共6页Materials Reports

基　　金：国家自然科学基金(51961145305,52171191);陕西省重点研发计划国际合作项目(2021KWZ-12);陕西省高校青年创新团队。

摘　　要：利用磁控溅射仪制备Ta作缓冲层、最上层Pd作保护层的Ta/Pd/CoFeMnSi/MgO(t_(MgO))/Pd多层膜以及仅界面次序不同的Ta/MgO(t_(MgO))/CoFeMnSi/Pd多层膜,其中,t MgO分别为1.0 nm、1.2 nm、1.4 nm、1.6 nm、1.8 nm、2.0 nm、2.2 nm和2.4 nm,在300℃真空条件下退火30 min,探究界面次序不同导致多层膜不同磁各向异性的物理机理。磁性测试结果表明,Ta/Pd/CoFeMnSi/MgO(t_(MgO))/Pd多层膜在t MgO为1.6~2.0 nm时显示较好的垂直磁各向异性(PMA),Ta/MgO(t_(MgO))/CoFeMnSi/Pd多层膜在MgO厚度测试范围内均显示面内磁各向异性(IMA)。分析界面处元素化学态得到Ta/MgO/CoFeMnSi/Pd结构多层膜不能实现PMA的原因包括:Ta层对O的抢夺导致Co、Fe与O的键合不足;CoFeMnSi中Si和Mn发生一定量的氧化,进一步使Co-O、Fe-O键合含量减少。Ta/Pd/CoFeMnSi/MgO(t_(MgO))/Pd multilayer films and Ta/MgO(t_(MgO))/Pd multilayer films with different interface orders were prepared by magnetron sputterer,in which t MgO was 1.0 nm,1.2 nm,1.4 nm,1.6 nm,1.8 nm,2.0 nm,2.2 nm and 2.4 nm,and annealed for 30 min under vacuum conditions at 300℃.The physical mechanism of different magnetic anisotropies caused by different interface orders was explored.The magnetic test results showed that Ta/Pd/CoFeMnSi/MgO(t_(MgO))/Pd multilayer films demonstrated good perpendicular magnetic anisotropy(PMA)when t MgO was 1.6—2.0 nm,and Ta/MgO(t_(MgO))/CoFeMnSi/Pd multilayer films showed in-plane magnetic anisotropy(IMA)in the MgO thickness test range.The reasons why the Ta/MgO/CoFeMnSi/Pd structure multilayer films cannot achieve PMA are that the combination of Ta layer to O correspondingly leads to insufficient bonding of Co,Fe with O;a certain amount of oxidation of Si and Mn further reduces the content of Co-O and Fe-O bonding.

关 键 词：垂直磁各向异性 CoFeMnSi 磁控溅射 

分 类 号：TB34[一般工业技术—材料科学与工程]