二酮吡咯并吡咯基半导体/碳量子点平面异质结光电晶体管的制备及性能研究  

Diketopyrrolopyrrole semiconductor/carbon quantum dots basedplanar heterojunctions for high-performance organic phototransistors

作　　者：艾志强 周涵 钱勇 程在天 王辉[2] 张发培 AI Zhiqiang;ZHOU Han;QIAN Yong;CHENG Zaitian;WANG Hui;ZHANG Fapei(University of Science and Technology of China,Hefei 230026,China;Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices,High Magnetic Field Laboratory,HFIPS,Chinese Academy of Sciences,Hefei 230031,China)

机构地区：[1]中国科学技术大学研究生院科学岛分院,合肥230026 [2]中国科学院合肥物质科学研究院强磁场科学中心,低功耗量子材料与器件安徽省重点实验室,合肥230031

出　　处：《功能材料》2024年第9期9031-9039,共9页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(12074383);国家重点研发计划项目(2021YFA1600202)。

摘　　要：采用二酮吡咯并吡咯基半导体聚合物PDVT-10与新型碳纳米材料碳量子点(CQDs)复合,通过溶液法制备了平面异质结薄膜有机光电晶体管(OPT)。PDVT-10/CQDs薄膜叠加了PDVT-10和CQDs的光学特性,在紫外至近红外的宽频范围显示了很高的光吸收能力。相较于纯PDVT-10光电晶体管,PDVT-10/CQDs平面异质结OPT展现出更优异的宽谱光电探测性能,在450 nm激光照射下,器件的光响应度达2.6×10^(4)A/W,比探测率达2.4×10^(13)Jones,最大光灵敏度超104;在808 nm光照下,光响应度甚至高达4.4×10^(4)A/W,比探测率达1.2×10^(13)Jones。根据OPT光响应过程的探究,PDVT-10/CQDs异质结器件的性能提升源于界面处合适的能级排布增强了激子的解离效率、促进电荷分离,并有效减少了空穴-电子复合几率,同时PDVT-10高空穴迁移率有助于形成高效的电荷传输通路。研究为发展高性能有机光探测器件中提供了一条重要途径。In this work,planar-heterojunction organic phototransistors(OPT)have been constructed from solution process,by combining a semiconducting diketopyrrolopyrrole polymer PDVT-10 and a novel carbon nanomaterial-carbon quantum dots(CQDs).The PDVT-10/CQDs planar heterojunction films,possessing the optical properties of both PDVT-10 and CQDs,reveal strong optical absorption in a wide spectral region from ultra-violet to near infra-red.Compared with pristine PDVT-10 phototransistors,such planar-heterojunction OPTs exhibit a remarkably higher performance on broad-spectrum photo-detection,with a photoresponsivity of 2.6×10^(4)A/W,a specific detectivity of 2.4×10^(13)Jones,and maximum light sensitivity higher than 104 under the 450-nm laser irradiation,as well as with a responsivity of 4.4×10^(4)A/W and a specific detectivity of 1.2×10^(13)Jones under the 808-nm laser irradiation.Based on the study of the photo-response mechanism for these devices,the performance improvement of the PDVT-10/CQDs based OPTs should be attributed to the favorable energy level alignment at the PDVT-10/CQDs interfaces,which enhances interfacial exciton dissociation and charge separation,meanwhile effectively suppresses the hole-electron recombination in the light-absorption layer.Furthermore,the formation of efficient carrier conduction pathway is benefited from high hole-mobility of PDVT-10 for the OPT performance enhancement.Our work offers a valuable avenue for the development of high performance light detectors.

关 键 词：半导体聚合物 碳量子点 平面异质结 有机光电晶体管 电荷分离 

分 类 号：O472.4[理学—半导体物理] TN321.5[理学—物理] TM23[电子电信—物理电子学]