侧栅晶体管太赫兹探测器的物理模型、结构制备与直流测试  

The physical model,structural fabrication,and DC testing of lateral gate transistor terahertz detectors

作　　者：康亚茹 董慧 刘晶 黄镇 李兆峰 颜伟[3] 王晓东[1,2,3] KANG Ya-Ru;DONG Hui;LIU Jing;HUANG Zhen;LI Zhao-Feng;YAN Wei;WANG Xiao-Dong(School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;School of Microelectronics,University of Science and Technology of China,Hefei 230026,China;Research Center,HuBei Jiufengshan Laboratory,Wuhan 430074,China)

机构地区：[1]中国科学院大学集成电路学院,北京100049 [2]中国科学院大学材料与光电研究中心,北京100049 [3]中国科学院半导体研究所半导体集成技术工程研究中心,北京100083 [4]中国科学技术大学微电子学院,安徽合肥230026 [5]湖北九峰山实验室研究中心,湖北武汉430074

出　　处：《红外与毫米波学报》2024年第4期526-532,共7页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61971395)。

摘　　要：针对侧栅结构高电子迁移率晶体管(High Electron Mobility Transistors,HEMTs)太赫兹探测器,构建了器件的直流输运和太赫兹探测的物理模型。运用自对准工艺,成功制备了形态良好、接触可靠的侧栅结构,有效地解决了器件双侧栅与台面间的接触问题,最终获得了不同栅宽(200 nm、800 nm和1400 nm)的侧栅GaN/AlGaN HEMT太赫兹探测器。通过直流测试表征发现,不同器件的栅宽与其阈值电压之间呈现出明显的线性关系,验证了侧栅结构HEMT太赫兹探测器的直流输运模型。上述结果为完整的侧栅HEMT太赫兹探测器的理论模型提供了实验验证和指导,为侧栅HEMT太赫兹探测器的发展提供了重要支持。For the high-electron-mobility transistor(HEMT)terahertz detector with a side-gate structure,a physical model for DC transport and terahertz detection of the device was constructed.Using a self-alignment process,wellshaped and reliable contacts for the side-gate structure were successfully fabricated,effectively solving contact issues between the dual gates and the mesa.Ultimately,terahertz detectors with different gate widths(200 nm,800 nm,and 1400 nm)of side-gate GaN/AlGaN HEMTs were obtained.DC tests revealed a clear linear relationship between the gate widths of different devices and their threshold voltages,confirming the DC transport model of the side-gate HEMT terahertz detector.These results provide experimental verification and guidance for the theoretical model of the complete side-gate HEMT terahertz detector,offering significant support for the development of side-gate HEMT terahertz detectors.

关 键 词：氮化镓 太赫兹探测器 侧栅 高电子迁移率晶体管 

分 类 号：TN386[电子电信—物理电子学]