光电导天线材料对辐射太赫兹波特性的模拟分析  

Simulation analysis of radiation terahertz wave characteristics of photoconductive antenna materials

作　　者：侯磊[1] 吴晓博 杨磊[1] 施卫[1] 杭玉桦 HOU Lei;WU Xiao-Bo;YANG Lei;SHI Wei;HANG Yu-Hua(Shaanxi Key Laboratory of Ultrafast Photoelectronic Technology and Terahertz Science,Xi’an University of Technology,Xi’an 710048,China;Suzhou Nuclear Power Research Institute,Suzhou 215004,China)

机构地区：[1]西安理工大学陕西省超快光电与太赫兹科学重点实验室,陕西西安710048 [2]苏州热工研究院有限公司,江苏苏州215004

出　　处：《红外与毫米波学报》2024年第4期551-556,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(62075179);陕西省教育厅基金重点项目(22JS026,22JS027)。

摘　　要：光电导天线是太赫兹时域光谱系统中普遍使用的宽带太赫兹辐射源,天线衬底材料对其辐射太赫兹波特性至关重要。目前广泛使用的光电导天线材料是第二代半导体材料GaAs,而第三代半导体材料具有更大的禁带宽度,对提高天线辐射太赫兹波的功率更有利。本文利用大孔径光电导天线的电流瞬冲模型,对常用光电导天线材料(SI-GaAs、LT-GaAs)和未来有望应用于光电导天线的第三代半导体材料(ZnSe、GaN、SiC)辐射太赫兹波的特性进行了仿真研究,结果表明在相同偏置电场和各自最高光通量触发下,LT-GaAs天线辐射太赫兹波的幅值最高、频谱最宽;第三代半导体材料制备的天线可以承受更高的偏置电场,在各自的最大偏置电场下辐射太赫兹波的强度远远大于GaAs天线。本工作对研制新型的第三代半导体光电导天线提供了理论指导。The photoconductive antenna is a kind of widely used broadband terahertz(THz)radiation source in THz time-domain spectroscopy systems,and the substrate material of the antenna is crucial for the characteristics of generated THz wave.The widely used photoconductive antenna material is the second-generation semiconductor of GaAs,while the third-generation semiconductor has a larger band gap,which is more advantageous for improving the power of THz wave from photoconductive antenna.In this work,the current surge model of large-aperture photoconductive antennas was used to simulate the characteristics of THz waves radiated by the photoconductive antenna made from commonly used SI-GaAs and LT-GaAs,and the third-generation semiconductors(ZnSe,GaN,SiC)that are expected to be used in the future for photoconductive antennas.The results show that under the same bias electric field and their respective highest pump laser flux,LT-GaAs antenna generates THz waves with the highest amplitude and widest frequency.The photoconductive antenna made by the third-generation semiconductor materials can withstand higher bias electric fields,and the intensity of radiated THz waves is much greater than that from GaAs antennas under their respective maximum bias electrical fields.This work provides theoretical guidance for the development of new third-generation semiconductor photoconductive antennas.

关 键 词：太赫兹辐射 第三代半导体材料 电流瞬冲模型 光电导天线 

分 类 号：O47[理学—半导体物理]