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作 者:杜秀红 胡恒广 DU Xiuhong;HU Hengguang(Dongxu Group,Beijing 100053)
机构地区:[1]东旭集团,北京100053
出 处:《中国建材科技》2024年第S01期24-28,共5页China Building Materials Science & Technology
摘 要:随着半导体电路集成度越来越高,进而对封装技术提出新的要求,TSV(Through-Silicon Via)技术已不能满足多器件、多芯片的高性能互联要求。TGV(Through-Glass Via)技术凭借其高频电学特性、制造生产流程简单、成本低、机械稳定性强等应用优势,开始在3D集成半导体封装等领域受到关注。本文主要综述了TGV技术的研究进展,介绍了TGV技术的背景及优势特性,梳理了TGV技术关键核心工艺和最新进展,尤其是TGV通孔成孔技术和填充工艺,最后讨论了TGV当前面临的技术问题与挑战,为后续研究TGV技术的研究提供了思路和参考。With the increasing integration of semiconductor circuits,and then put forward new requirements for packaging technology,TSV(Through-Silicon Via)technology can no longer meet the high-performance interconnection requirements of multi-devices and multi-chips.TGV(Through-Glass Via)technology has attracted attention in 3D integrated semiconductor packaging and other fields with its advantages of high-frequency electrical characteristics,simple manufacturing process,low cost and strong mechanical stability.This paper mainly reviews the research progress of TGV technology,introduces the background and advantages of TGV technology,combs the key core process and the latest progress of TGV technology,especially the TGV through hole forming technology and filling process,finally discusses the current technical problems and challenges facing TGV,and provides ideas and reference for the subsequent research of TGV technology.
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