智能计量装置5G通讯技术关键半导体材料碳化硅制造优化  

Manufacturing optimization of silicon carbide—a key semiconductor material in 5G communication technology for intelligent metering devices

作　　者：谭炳源 郭江[2] 姚栋方 肖雄 陈崇明 章芳情 TAN Bingyuan;GUO Jiang;YAO Dongfang;XIAO Xiong;CHEN Chongming;ZHANG Fangqing(Maintenance and Test Center of EHV Power Transmission Company,China Southern Power Grid,Guangzhou 510700,China;School of Power and Mechanical Engineering,Wuhan University,Wuhan 430072,China)

机构地区：[1]中国南方电网有限责任公司超高压输电公司检修试验中心,广东广州510700 [2]武汉大学动力与机械学院,湖北武汉430072

出　　处：《武汉大学学报（工学版）》2024年第9期1335-1341,共7页Engineering Journal of Wuhan University

基　　金：国家重点研发计划项目(编号:2020YFB1709704)。

摘　　要：为提高5G通讯关键半导体材料碳化硅的生长速率提出了一种新的思路,对碳化硅晶体制造的关键技术物理气相运输法进行研究,通过构建包含热场、流场以及多孔介质在内的多物理场,分析了碳化硅生产过程中的流动及传热传质情况,同时提出了一种改进式的坩埚结构,在坩埚中心增加若干多孔碳管。计算结果表明,新坩埚结构能够提高坩埚中心粉源温度,并有利于多孔粉源内部的碳化硅气体逸出,提高籽晶表面的过饱和度,进而提高晶体生长速度。A new idea was proposed in this paper for improving the growth rate of silicon carbide,which is a key semiconductor material for 5G communication.Physical vapor transport–the key technology of silicon carbide crystal manufacturing was studied.By constructing multiple physical fields including thermal field,flow field and porous media,the flow and heat and mass transfer in the silicon carbide manufacturing process were analyzed.An improved crucible structure was proposed,and several porous carbon tubes were added to the center of the crucible.The calculation results indicate that the new crucible structure can increase the temperature of the powder source in the center of the crucible,facilitate the escape of silicon carbide gas inside the porous powder source,increase the super-saturation of the seed crystal surface,and thus increase the crystal growth rate.

关 键 词：智能计量装置 5G通讯 碳化硅 多孔碳管 数值模拟 传热传质 

分 类 号：TN304.2[电子电信—物理电子学] TN929.5