GaN器件稳态温敏电参数特性的研究  

Research on Steady-State Temperature-Sensitive Electric Parameters Characteristics of GaN Devices

作　　者：王凯宏 朱一荻 孙鹏菊[2] 赵浩 邾玢鑫[1] Wang Kaihong;Zhu Yidi;Sun Pengju;Zhao Hao;Zhu Binxin(Hubei Provincial Engineering Technology Research Center for Intelligent Energy Technology,China Three Gorges University,Yichang443002,China;State Key Laboratory of Power Transmission Equipment Technology,Chongqing University,Chongqing400044China)

机构地区：[1]智慧能源技术湖北省工程研究中心(三峡大学),宜昌443002 [2]输变电装备技术全国重点实验室(重庆大学),重庆400044

出　　处：《电工技术学报》2024年第19期5995-6007,共13页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金联合基金(U22A20226);宜昌市自然科学研究项目(A23-2-019);湖北省自然科学基金(2024AFB234);广西自治区重点研发计划(2022AB05028)资助项目。

摘　　要：氮化镓(GaN)器件因具有高功率密度和高效率等特点,在快速充电设备和数据中心等场景中得到应用。然而,伴随着氮化镓器件热流密度的显著提高,结温成为器件可靠性不容忽视的重要因素。目前基于温敏电参数的氮化镓器件结温监测技术尚处于探索阶段,器件的温敏电参数特性并不明确。该文针对氮化镓器件常见的稳态温敏电参数,以小电流饱和压降、阈值电压和类体二极管压降为研究对象,考虑关联参数对三种温敏电参数特性的影响,提出波动系数用以表征温敏电参数的稳定性。通过实验对比,发现GaN器件的小电流饱和压降作为温敏电参数具有良好的温敏特性,优于其阈值电压和类体二极管压降,具有潜在的结温测量应用价值。Gallium Nitride(GaN)devices have the advantages of fast switching speed,high switching frequency,and small on-resistance,which have been deeply applied in fast charging devices,data centers,and 5G devices.However,as the physical dimensions of GaN devices decrease and the power density of application devices increases,the heat flux density of the devices significantly increases,thus the junction temperature has become an important factor that cannot be ignored in the reliability of GaN devices.The junction temperature monitoring technology of GaN devices based on temperature-sensitive electrical parameters(TSEPs)is still in the exploratory stage.The study of steady-state TSEPs characteristics is helpful for the reliabilityof devices such as health management based on junction temperature.To deeply understand the steady-state TSEPscharacteristics of GaN devices,this paper explores three common steady-state TSEPs:the saturation voltage with low current injection,threshold voltage,and body-like diode voltage.Firstly,referring to the related literature and theparameter measurement standards of power switching devices,three measurement methods of TSEPs are given and physical characteristics of TSEPs related to junction temperature are analyzed,which provides a reference for subsequent parameter characteristics research.Secondly,the experimental platformis built,and the measurement circuitsare introduced for studying the characteristics of the three TSEPs.In addition,to ensure that the influence of temperature on the measurement circuit is as small as possible,the measurement circuit adopts a split type and vertical layout.The experimental results show that the influence of temperature on the measuring plate is negligible.Finally,the temperature-sensitive characteristics and stability of the three TSEPs are studied.In terms of temperature-sensitivecharacteristics,the linearity and sensitivity of the three TSEPs are mainly discussed.Also,the potential influence of the test current and gate voltageis specifically research

关 键 词：氮化镓器件 可靠性 温敏电参数 结温监测 

分 类 号：TM46[电气工程—电器]