电场调控增强型背照式单光子雪崩二极管  

Field-controlled enhancement backside-illuminated single photon avalanche diode

作　　者：李聪 王哲[2,3] 杨旭 田娜 冯鹏 窦润江[2,3] 于双铭 刘剑 吴南健 李传波[1] 刘力源 LI Cong;WANG Zhe;YANG Xu;TIAN Na;FENG Peng;DOU Runjiang;YU Shuangming;LIU Jian;WU Nanjian;LI Chuanbo;LIU Liyuan(School of Science,Minzu University of China,Beijing 100081,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-electronics Technology,University of Chinese Academy of Sciences,Beijing 100049,China;School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中央民族大学理学院,北京100081 [2]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083 [3]中国科学院大学材料科学与光电技术学院,北京100049 [4]中国科学院大学电子电气与通信工程学院,北京100049

出　　处：《集成电路与嵌入式系统》2024年第10期1-8,共8页Integrated Circuits and Embedded Systems

基　　金：国家自然科学基金项目(62334008,62274190,61934007,62134004)。

摘　　要：本研究利用搭建的仿真设计平台开发了一款电场调控增强型背照式单光子雪崩二极管(SPAD)器件,通过调控SPAD雪崩区电场,进一步提升了背照式器件的光子探测效率,降低了暗计数率。仿真结果表明,本研究设计的SPAD在水平和垂直电场的协同作用下,有效提高了电子倍增效率,峰值探测效率达到50.1%,在过偏压为3 V时,暗计数率降低至764 Hz。本文对比分析了不同耗尽层厚度和P-Well半径对电场调控增强型背照式SPAD器件性能的影响,并确定了最优结构尺寸。研究结果为基于SPAD的高精度光电探测应用提供了新的技术途径,为SPAD器件在科学研究和工业应用中的进一步发展奠定了基础。This study developed a Field-Controlled Enhancement Backside-Illuminated Single-Photon Avalanche Diode(SPAD)device using a simulation design platform.By adjusting the electric field in the avalanche region of the backside-illuminated SPAD,the photon detection efficiency was further improved,and the dark count rate was reduced.Simulation results indicate that the SPAD design effectively enhances electron multiplication efficiency through the synergistic effect of horizontal and vertical electric fields,achieving a peak detection efficiency of 50.1%.At an excess bias voltage of 3 V,the dark count rate decreased to 764 Hz.The study compares and analyzes the effects of different depletion layer thicknesses and P-Well radius on the performance of the field-controlled enhanced backside SPAD device,determining the optimal structural dimensions.The results provide a new technical approach for high-precision photoelectric detection applications based on SPAD and lay the groundwork for further development and application of SPAD technology in scientific research and industrial applications.

关 键 词：单光子雪崩二极管 背照式 光子探测效率 暗计数率 电场调控 器件仿真 

分 类 号：TN364[电子电信—物理电子学]