铝互连工艺中光刻胶残留原因及解决方法  

Reasons and solutions for photoresist residual in aluminum interconnection process

作　　者：李兆营 陈国雪 Li Zhaoying;Chen Guoxue(Vital Optics Technology Co.,Ltd.,Chuzhou 239000,China)

机构地区：[1]安徽光智科技有限公司,安徽滁州239000

出　　处：《电镀与精饰》2024年第10期96-102,共7页Plating & Finishing

摘　　要：铝互连工艺结束后检查晶圆表面发现大片残留缺陷,通过成分分析确认其为光刻胶。对镀膜、光刻、腐蚀、去胶工序进行工艺排查后发现改变镀膜工艺可以改善光刻胶残留情况。实验结果证明铝薄膜表面形貌与光刻胶残留现象密切相关。减小薄膜表面粗糙度可以改善光刻胶残留现象。Large residual defects were found on the surface of the wafer in aluminum interconnection process,which were confirmed as photoresist by component analysis.It was found that changing the coating process can improve the residual situation of photoresist by process inspections on coating,lithography,corrosion and removing of photoresist.The results show that the surface morphology of the aluminum film is closely related to the photoresist residual.The residuals can be improved by reducing the surface roughness of the film.

关 键 词：光刻胶残留 铝互连 表面粗糙度 磁控溅射 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]