双沟道H^(+)离子注入1550 nm高效率低噪声DFB激光器  

1550 nm High-Efficiency and Low-Noise DFB Lasers by Dual-Channel H^(+)Ion Implantation

作　　者：邢政[1] 穆忠如 孙天玉[1] 张宝顺[1] Xing Zheng;Mu Zhongru;Sun Tianyu;Zhang Baoshun(Nano-Fabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,Jiangsu,China)

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台,江苏苏州215123

出　　处：《光学学报》2024年第16期192-197,共6页Acta Optica Sinica

基　　金：国家重点研发计划(2022YFB2802500);中国科学院战略性先导科技专项(XDB43030202)。

摘　　要：采用具有良好温度特性和高微分增益的AlGaInAs作为量子阱材料并进行有源区优化,通过双沟道和H+离子注入结构来限制电流的横向扩散,制备出1550 nm高效率低噪声单模AlGaInAs/InP分布式反馈(DFB)激光器。室温连续工作模式下,激光器的阈值电流小于40 mA,注入电流为200 mA时的斜率效率大于0.35 mW/mA,输出功率大于60 mW,相对强度噪声低于-160 dB/Hz,洛伦兹线宽小于200 kHz,该器件具有较高的斜率效率和良好的噪声抑制特性。Objective High-efficiency and low-noise 1550 nm semiconductor lasers are essential for analog optical links to maximize the system spurious free dynamic range(SFDR),which is a key feature for numerous applications such as microwave photonics systems,signal distribution in broadband analog communications as cable TV(CATV),fiber-optic sensors,high-resolution spectroscopy as well as light detection and ranging devices(LiDARs).The buried heterostructure(BH)laser has proven to be effective at reducing the relative intensity noise(RIN)and the threshold current through tight confinement of charge carriers and photons within the device active region as defined by a lateral current-blocking structure.However,the BH laser requires an additional regrowth process,which greatly increases the process complexity and cost,and highly reduces the device reliability.By conducting dual-channel H^(+)ion implantation to restrict the current transverse diffusion,we design and fabricate a 1550 nm high-efficiency and low RIN fundamental transverse mode DFB laser,and study the RIN and linewidth characterizations.Methods We adopt the AlGalnAs material that exhibits sound temperature characteristics and high differential gain as a quantum well and waveguide layer to achieve high slope efficiency and high power.Additionally,an asymmetrical cladding is employed to reduce internal loss by lowering the optical overlap between the optical eigenmode and the p-doped layers.The dual-channel laser ridge-waveguide,11μm/2.5μm/11μm wide,is formed by inductively coupled plasma(ICP)etching(Fig.2).Lateral current spreading is suppressed by proton implantation of 350 keV with doses of 1.0×10^(15)cm^(-2)adjacent to the ridge(Fig.1).In continuous-wave operation at room temperature,the RIN(Fig.5),linewidth(Fig.6),slope efficiency,and threshold current(Fig.3)are analyzed.Results and Discussions In continuous-wave operation at room temperature,the threshold current of the designed H^(+)ion-implanted DFB laser is less than 40 mA(Fig.3).With injection current

关 键 词：激光器 斜率效率 相对强度噪声 

分 类 号：O475[理学—半导体物理]