Zr、Cr掺杂对铜互连薄膜结构及性能的影响  

Effect of Zr and Cr Doping on the Structure and Properties of Copper Interconnection Thin Films

作　　者：尹振东 林松盛 付志强[2] 苏一凡 Yin Zhendong;Lin Songsheng;Fu Zhiqiang;Su Yifan(Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology,National Engineering Laboratory of Modern Materials Surface Engineering Technology,Institute of New Materials,Guangdong Academy of Sciences,Guangzhou 510651,China;School of Engineering and Technology,China University of Geosciences(Beijing),Beijing 100083,China)

机构地区：[1]广东省科学院新材料研究所现代材料表面工程技术国家工程实验室广东省现代表面工程技术重点实验室,广东广州510651 [2]中国地质大学(北京)工程技术学院,北京100083

出　　处：《稀有金属材料与工程》2024年第9期2535-2545,共11页Rare Metal Materials and Engineering

基　　金：广东省重点领域研究发展计划(2020B0101320001);广东省科学院发展专项资金(2022GDASZH-2022010109,2022GDASZH-2022010103)。

摘　　要：研究了Zr和Cr元素掺杂对Cu互连薄膜的结构及性能的影响。利用直流磁控溅射技术在SiO_(2)/Si衬底上沉积了Cu、Cu(Zr)、Cu(Cr)、Cu(ZrCr)4种薄膜,并在温度400~800℃下对薄膜真空退火1h。通过SEM、XRD和四探针法对不同薄膜的表面形貌、微观结构与电学性能进行测试分析。结果表明,Zr或Cr单元素掺杂均能在一定程度上提高Cu互连薄膜的热稳定性。Zr或Cr元素的析出阻止了Cu膜与Si基底的互扩散以及晶粒的长大和团聚,使薄膜层保持良好的性能,经700℃真空退火后,Cu(Zr)和Cu(Cr)薄膜的电阻率小于10μΩ·cm(纯Cu薄膜为74.70μΩ·cm);Zr和Cr元素共掺杂进一步提升Cu互连薄膜的热稳定性,同时保持较低的电阻率和互连可靠性,尤其经800℃退火后,合金薄膜的电阻率低至3.23μΩ·cm(纯Cu薄膜为103.50μΩ·cm)。The effects of zirconium(Zr)and chromium(Cr)elements doping on the structure and properties of copper(Cu)interconnection thin films were investigated.Cu,Cu(Zr),Cu(Cr),and Cu(ZrCr)interconnection films were deposited on SiO2/Si substrates by direct current magnetron sputtering technique,and the films were annealed under vacuum condition at the temperature of 400-800℃ for 1 h.The surface morphologies,microstructure,and electrical properties of the films were tested and analyzed by SEM,XRD,and four probes method.The results show that single element doping of Zr or Cr improves the thermal stability of Cu interconnect films.The precipitation of Zr or Cr elements prevents mutual diffusion between Cu film and Si substrate,and suppresses the growth and aggregation of the grains,which make the films maintain good properties.After vacuum annealing at 700℃,the resistivity of the Cu(Zr)or Cu(Cr)film is less than 10μΩ·cm(that of pure Cu film is 74.70μΩ·cm).The co-doping of Zr and Cr elements further improves the thermal stability of Cu interconnection films while maintaining low resistivity and interconnect reliability.Especially after vacuum annealing at 800℃,the resistivity of Cu(ZrCr)film is as low as 3.23μΩ·cm(that of pure Cu film is 103.50μΩ·cm).

关 键 词：铜互连薄膜 掺杂 电阻率 热稳定性 扩散阻挡层 

分 类 号：TB43[一般工业技术]