C/C复合材料表面低红外发射率薄膜研究  

Study of Low Infrared Emissivity Films on the Surface of C/C Composite

作　　者：王心怡 罗发[1] 巩学慧 张月瑞 张刘超[1] 张瑞端 李鹏 WANG Xinyi;LUO Fa;GONG Xuehui;ZHANG Yuerui;ZHANG Liuchao;ZHANG Ruiduan;LI Peng(State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi’an 710072,Shaanxi;Shaanxi Huaqin Technology Industry Ltd,Xi’an 710076,Shaanxi)

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072 [2]陕西华秦科技实业股份有限公司,陕西西安710076

出　　处：《火箭军工程大学学报》2024年第5期88-95,共8页Journal of Rocket Force University of Engineering

基　　金：国家科技重大专项(J2019-VI-0015-0130)。

摘　　要：为降低C/C复合材料的红外发射率,同时提升其在高于400℃时的抗氧化性能,在C/C复合材料表面制备抗氧化涂层以提高其高温使用寿命。首先采用涂刷法在C/C复合材料表面制备SiC-玻璃复合抗氧化涂层,并在抗氧化涂层表面通过磁控溅射制备低红外发射率Ir薄膜。然后,系统探索并优化了抗氧化涂层和低红外发射率Ir薄膜的制备工艺,并探究了高温氧化行为对涂层红外发射率的影响。结果表明:固定溅射功率为100 W、溅射气压为1.2 Pa、靶基距为65 mm、基底温度为240℃时,在SiC-玻璃复合抗氧化涂层表面制备的低红外发射率Ir薄膜,在1 100℃下氧化1 h后,在3~5μm和8~14μm的红外发射率仍能保持0.1以下。To enhance the oxidation resistance and reduce the infrared emissivity of C/C composites under environment above 400℃,the oxidation resistance coating was applied to the surface of the composite,by which the life span of the composite under high temperature could be prolonged.Initially,the SiC-glass composite oxidant resistance coating was applied to the sur-face of C/C composites by the brushing technique.Subsequently,the low infrared emissivity Ir film was deposited onto the surface of the oxidant resistance coating by magnetron sputtering.Thereby,preparation processes of the oxidant resistance coating and the low infrared emissivity Ir film were systematically investigated and optimized.Additionally,the impact of high-temperature oxidation behavior on the infrared emissivity of the coating was explored.Results showed that the oxidant resistance coating of the thin film of Ir with low infrared emissivity is successfully created on the surface of the SiC-glass composite at experimental settings of a fixed sputtering power of 100 W,a sputtering pressure of 1.2 Pa,a target-to-substrate distance of 65 mm and a substrate temperature of 240℃.Results of the high-temperature oxidation test showed that when the oxida-tion temperature is 1100℃and the oxidation time is 1 h,the infrared emissivity of the sample at wavelengths of 3~5μm and 8~14μm are under 0.1.

关 键 词：C/C复合材料 红外隐身 磁控溅射 抗氧化涂层 

分 类 号：TB332[一般工业技术—材料科学与工程]